IRF5852TR Allicdata Electronics
Allicdata Part #:

IRF5852TR-ND

Manufacturer Part#:

IRF5852TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 20V 2.7A 6-TSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 2.7A 960mW Sur...
DataSheet: IRF5852TR datasheetIRF5852TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Description

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The IRF5852TR is a transistor especially designed for use in a wide range of applications, from automotive to portable electronics and from audio to lighting control. This part is a power, field effect transistor (FET) array derived from the long established Trench Mosfet array concept. It is designed with a high performance internal P-channel power MOSFET array and an N-channel external power MOSFET array with robust, source-follower circuits. Combining multiple FETs in an array allows for higher current ratings without needing to increase the device footprint.

The IRF5852TR offers a variety of benefits over traditional field effect transistors, like a lower on-state current, improved breakdown voltage, superior on-resistance and switching speed, higher output current, higher efficiency and lower power consumption. The IRF5852TR also has the ability to be paralleled, thus allowing the user to increase the power output and current rating.

In operation, when a gate voltage is applied to the input of the FET array, the transistor begins to conduct by turning on the internal P-channel power MOSFETs. This action causes the input voltage to become more negative and the output voltage subsequently becomes more negative, in turn providing increased current gain. As the input voltage is decreasing, the current flow becomes greater, up to the maximum current rating of the device. At the same time, the output voltage is greater, thus providing current and voltage gain.

One of the main applications of the IRF5852TR is in motor/solenoid control, where it can be used to regulate a high-current power supply for controlling a motor or solenoid. Since the IRF5852TR employs a P-channel power MOSFET and an N-channel power MOSFET, it can operate in either active low (commonly used for motor control circuits) or active high (used for solenoid control) operation. In active low operation, the IRF5852TR can be used to switch loads up to 30A.

The IRF5852TR is also ideal for almost any lighting control system, including LED lighting and fluorescent lighting. It can be used to control the intensity of lights and the power level of the LEDs. In addition, the IRF5852TR can be used to provide dimming control in dimmable light fixtures, to create interesting lighting effects, and to control the speed of motorized light fixtures.

The IRF5852TR can also be used in automotive applications, such as fuel injection systems, relay control systems and engine control units. The device can be used to switch loads up to 30A and provide accurate control over fuel injectors, coils and relays. The Trench Mosfet array found in the IRF5852TR can provide maximum power output and improved efficiency compared to traditional FET designs.

The IRF5852TR is an easy-to-use and highly efficient FET array that offers a great number of features and benefits. Its combined P-channel and N-channel MOSFETs offer high-speed switching, low on-resistance, improved surge and EMI performance, a wide operating temperature range and a compact package size. With its wide variety of applications, the IRF5852TR is an ideal choice for various power control applications.

The specific data is subject to PDF, and the above content is for reference

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