IRF7389TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7389TRPBF is one of the many transistor arrays available on the market today. It is used mainly in automotive applications and power supply applications. By utilizing high power MOSFETs, it can handle high voltage and current applications. The IRF7389TRPBF is a type of Field Effect Transistor (FET) designed for use in high-performance applications.

It is an enhancement mode MOSFET that is designed to be used in applications where high performance is of paramount importance. The IRF7389TRPBF can be used for a variety of applications including motor control, power supply regulation, and audio amplifier circuits. It is also suitable for many automotive applications such as anti-lock brakes, power windows, and body control modules.

The IRF7389TRPBF has a maximum breakdown voltage of 80V, a maximum on-state resistance of 8 ohms, and a maximum DC gate current of 1.2A. It has a high-power dissipation rating of 4W, making it ideal for use in high-power circuits. It has a low thermal resistance of 4.5°C/W, and a low gate charge of 4nC. These features make the IRF7389TRPBF a good choice for circuits where high current and voltage levels are required.

The IRF7389TRPBF is composed of a single die consisting of a series of transistors connected in parallel. Each transistor is connected to its own gate, drain and source. The main purpose of this design is to reduce the on-resistance of the FET and to promote improved power efficiency. The main advantage of using this type of array is that it is able to provide higher current and voltage outputs than a single transistor. This allows the IRF7389TRPBF to be used in higher power applications.

The IRF7389TRPBF utilizes an advanced technology known as the “CoolMOS” process, which enables the device to offer superior power efficiency and improved switching performance. The CoolMOS process combines a high-performance MOSFET structure with special gate oxide and low thermal resistance, resulting in a device that can operate efficiently at higher voltages and currents. The IRF7389TRPBF also has a wide operating temperature range of -55 to 150°C, making it suitable for both automotive and industrial applications.

The working principle of the IRF7389TRPBF is quite simple. When a voltage is applied to its gate, it induces a current in the device which results in a voltage drop across the drain-source. This change in voltage alters the resistance of the device and thus causes the current to be adjusted accordingly. The result is that the device acts as either a switch (on/off) or as an amplifier (voltage regulator).

In conclusion, the IRF7389TRPBF is an ideal component for use in automotive, industrial and audio applications. Its low thermal resistance and high-power dissipation make it suitable for high-power circuits. By using an advanced CoolMOS process, it also provides improved efficiency and switching performance. Its working principle is relatively simple, and its wide operating temperature range makes it suitable for use in both automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference