IRF7524D1TRPBF

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package:	Micro8™
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	8.2nC @ 4.5V
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	270 mOhm @ 1.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.7A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IntroductionThe IRF7524D1TRPBF is a single complementary MOSFET (C-MOSFET) commonly used in various application fields. It is available in an ultraslim‚ tiny‚ lead-free Surface Mount Device (SMD) package. The device is designed for high-speed switching applications and is constructed using high-quality dielectrics and low-resistance metal lines for RF, DC and power applications.FeaturesThe IRF7524D1TRPBF offers several features which make it suitable for a variety of applications. It has an ultra-low on-resistance of 0.22 ohms, which reduces losses and minimizes on-state resistance. This device also has a gate-source breakdown voltage of 8 V, which ensures good operation even in high electric field environments. The device has a maximum power rating of 1.8 W, a continuous drain current of 0.6 A, and a guaranteed drain-source breakdown voltage range of 80 to 100 V. It is also able to operate at temperatures up to 150°C and is capable of switching frequencies up to 150MHz. Additionally, the device has an ultra-low input capacitance, which reduces gate charge and minimizes switching damping.ApplicationThe IRF7524D1TRPBF is suitable for a variety of applications, such as low-side switching, high-side switching, power management, and switching power supplies. Due to its ultra-low on-resistance, it is ideal for applications that require high current switching, such as automotive power management systems and motor control boards. For applications that require low EMI (electromagnetic interference), the device is capable of suppressing EMI noise through its low input capacitance and high switching speed. Additionally, the device is ideal for high-frequency switching applications such as television receivers, mobile phones, and digital communications systems.Working PrincipleThe IRF7524D1TRPBF works on the principle of a MOSFET. When a small voltage is applied to the gate of the MOSFET, a channel is created between the source and the drain, allowing current flow through the MOSFET. The amount of current can be controlled by varying the voltage applied to the gate. When no voltage is applied, the channel is blocked and no current can flow through the MOSFET. Thus, this device is ideal for high-speed switching applications.ConclusionThe IRF7524D1TRPBF is a singles complementary MOSFET (C-MOSFET) that can be used in various application fields. It offers several features such as ultra-low on-resistance and gate source breakdown voltage that makes it suitable for high-speed switching and low-EMI applications. Additionally, it operates using the MOSFET principle of creating and blocking a channel between the source and the drain based on the applied voltage.

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