Allicdata Part #: | IRF7526D1TRPBFTR-ND |
Manufacturer Part#: |
IRF7526D1TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 2A MICRO8 |
More Detail: | P-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount Mic... |
DataSheet: | IRF7526D1TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7526D1TRPBF is a type of field effect transistor (FET). FETs are one of the most popular types of transistors available for use with digital and analog circuits. The IRF7526D1TRPBF is a single MOSFET, a type of FET that is commonly used for voltage and power regulation. The device is constructed from gallium-arsenide (GaAs), an alloy of gallium and arsenic, which provides superior performance and reliability.
The IRF7526D1TRPBF has a very low on-state resistance, which makes it ideal for voltage and power regulation. It has a high switching speed, allowing it to react quickly to changes in input voltage. Additionally, the device has a high maximum voltage rating of 80V and maximum drain-source voltage of 100V. This makes it a good choice for use in high-current and high-voltage applications. The device can also handle up to 17A of continuous drain current, which is ideal for power management systems.
The IRF7526D1TRPBF is a versatile device that can be used in a variety of applications. It is commonly used in voltage and power regulation applications, such as switching power supplies. It can also be used as a switch for controlling several circuits from one input signal, such as in relay systems. Additionally, the device can be used in high-power audio amplifier circuits, and radio frequency (RF) amplifiers.
The working principle of an IRF7526D1TRPBF is based on the fact that a voltage applied to the gate (which is made of n-type material) produces an electric field that attracts the positively charged carriers (holes) from the p-type semiconductor to the gate. This creates a depletion region around the gate and allows current to flow across it. With the correct voltage applied to the gate, a steady current can be maintained between the drain and the source. When the gate voltage is changed, the current changes accordingly.
The IRF7526D1TRPBF is a popular choice for voltage and power regulation, as well as audio and RF amplification applications. Its low on-state resistance and wide range of operating voltages make it an ideal device for these applications. Additionally, its high current carrying capabilities make it an excellent choice for power management and switching power supplies. With its superior performance and reliable operation, the IRF7526D1TRPBF is a great device for any application requiring a reliable power regulator.
The specific data is subject to PDF, and the above content is for reference
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