IRF7220GTRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7220GTRPBF is a field effect transistor (FET) designed for high voltage, low on-resistance, and low gate charge applications. It is constructed using a junction field effect (JFET) technology and has an optically controlled body-contact for gate-to-source metal-oxide-semiconductor (MOS) structures.

The IRF7220GTRPBF is a single N-channel, depletion mode, power MOSFET designed for use in various applications such as motor control, power supplies, motor drives, communication equipment, audio systems, and automotive applications. It has a breakdown voltage of 300V and a current rating of 50A.

The IRF7220GTRPBF design is optimized for low on-resistance and low gate charge. It also features trench process technology for low Rds(on) and low power loss. The device features an internal avalanche diode for operation under negative gate-to-source voltages. The original package of this device is the power leaded, hermetic TO-220 package.

The drain-source connection is realized by a metal-oxide-semiconductor (MOS) structure. The MOS structure consists of two layers of polysilicon separated by an oxide layer. The gate to source connection is connected by a gate oxide layer, whereas the substrate material is connected to the drain and source. This unique structure allows for a low on-resistance, low gate charge and low power dissipation.

The working principle of the IRF7220GTRPBF is based on the transfer of electric charges between the positive and negative electric potentials of the drain and source of the device. When a positive electric potential is applied to the drain, electric charges are transferred from the negative source to the positive drain. The electric charges flow from the source to the drain in the form of an electric current. The transfer of charges between the source and drain is controlled by the gate voltage, which can be adjusted by applying a voltage to the gate connection.

The IRF7220GTRPBF is designed for applications that require maximum switching speed, load current, and minimum on-state resistance. The device is suitable for use in high-voltage, low-current systems such as motor control, communication equipment, audio systems, etc. The device is also suitable for power supply applications, power management, automotive products, and other electronic systems.

The IRF7220GTRPBF is an important device that is used in various applications — its low on-resistance and low gate charge properties make it ideal for use in high-voltage applications. The device also has a low switching speed and low on-state resistance, making it suitable for use in power supplies, power management systems, audio systems, and communication equipment.

The specific data is subject to PDF, and the above content is for reference