IRF7459TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7459TRPBF Transistors are an important part of the modern electronics industry, and are used in almost all electronic devices. This transistor is manufactured by International Rectifier, an American company specialized in the development and manufacture of power semiconductor devices. This device is a dual N-channel enhancement mode power field-effect transistor (FET). It is designed to operate with very low total gate charge and gate-source voltage, making it ideal for use in applications where high power, efficiency and minimal switching losses are required.

The IRF7459TRPBF has a maximum drain current of 40A, and a drain-source voltage of 600V maximum. It also has a maximum power dissipation of 780 Watts and an on-state resistance of 0.027 ohms. This transistor has an operating temperature range from -55°C to +175°C and a storage temperature range from -55°C to +150°C. It is available with a surface mount SO-8 package, making it suitable for printed circuit boards (PCBs) and other applications.

The majority of transistors are operated as switches, and the IRF7459TRPBF is no exception. When the gate voltage is applied and a current flows through the device, it is said to be in a conductive state, and the transistor is ‘ON’. When the reverse bias is applied, current is prevented from flowing and the transistor is ‘OFF’. Therefore, this transistor is useful in applications where a high input impedance is required and a low output impedance is desired. It is also well suited for switching applications, such as power inverters, signal switching and signal amplification.

The IRF7459TRPBF is typically used in applications such as high frequency switching power supplies and DC-DC converters. These devices are particularly suited for switching higher voltages and powers, such as those found in industrial, automotive, and medical applications. The low gate charge of this device allows for the switching of higher frequencies, generally up to 10MHz.

The FET also has special advantages in audio applications, where its wide band and high-frequency characteristics make it ideal for use in amplifiers, mixers, and other audio devices. Additionally, it can be used as a phase modulator for FM signals, and for applications where high power control is required.

The working principle of an IRF7459TRPBF transistor is similar to that of other FETs. It consists of three terminals, the gate, the source, and the drain. The gate terminal is the control point of the transistor, and is typically driven by an external voltage or current. The voltage applied at the gate creates a channel of electrons between the source and the drain, allowing electric current to flow between them. When the gate voltage increases, the channel width widens and more current flows through the transistor. The current is limited only by the source and drain resistances.

The IRF7459TRPBF Transistor is a versatile and reliable device that can be used in a wide range of applications. It is a good choice for use in audio, power amplification, switching, and signal conversion applications. It is also ideal for use as a switch for medium to high power applications; as it has very low total gate charge and excellent switching performance at higher frequencies. This type of transistor is also tolerant of high-temperature operation and can be used in industrial, automotive, and medical applications.

The specific data is subject to PDF, and the above content is for reference