IRF7406GTRPBF Allicdata Electronics
Allicdata Part #:

IRF7406GTRPBFTR-ND

Manufacturer Part#:

IRF7406GTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 6.7A 8-SOIC
More Detail: P-Channel 30V 5.8A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7406GTRPBF datasheetIRF7406GTRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7406GTRPBF is an enhancement-mode, high-side, visual gate MOSFET commonly used in electronic power conversion applications. It is a device that is specifically designed to switch and control the high-voltage inputs and outputs in power converters. IRF7406GTRPBF can be used in a variety of applications, ranging from industrial and automotive to consumer electronics.

The most common application of IRF7406GTRPBF is as a high-side switch in DC/DC converters. The device can operate in either step-up or step-down mode, and can be used to convert the input voltage to any desired output voltage. IRF7406GTRPBF can also be used in motor drive applications, such as H-bridge circuits for controlling the direction of a motor.

In addition, IRF7406GTRPBF can also be used as an input switch for switching between different sources of power, such as battery and AC power, in systems with multiple power inputs. The device is also capable of providing protection from overvoltage, over-temperature, and over-current conditions, making it a versatile and reliable solution for power conversion.

The working principle of the IRF7406GTRPBF relies on the MOSFET operating at its threshold voltage. When the voltage applied to the gate is equal to or greater than the threshold voltage, the MOSFET is turned on and allows current to flow from the drain to the source. The drain-source voltage at this point is typically much higher than the gate voltage. In this way, the device can be used to switch between high-voltage input and output levels with minimal loss of energy.

As with any other power switch device, the IRF7406GTRPBF has several important characteristics that must be taken into consideration when selecting the correct device. In particular, the maximum drain-source voltage, drain-source current, maximum gate-source voltage, power dissipation, and rise and fall times should all be evaluated.

When choosing the best IRF7406GTRPBF device for your application, it is important to understand its limitations and capabilities, and select the device that best meets your requirements. With the right selection and usage, this device can provide reliable power conversion and switching performance.

The specific data is subject to PDF, and the above content is for reference

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