Allicdata Part #: | IRF7815PBF-ND |
Manufacturer Part#: |
IRF7815PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 5.1A 8-SOIC |
More Detail: | N-Channel 150V 5.1A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | IRF7815PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1647pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF7815PBF is a vertical power MOSFET (metal-oxide-semiconductor field-effect transistor). It is a highly efficient device that is used to control power in a variety of applications, from automotive electronics to audio amplifiers. It is considered to be one of the most popular power MOSFETs available. This device has a low on-resistance of 11 mΩ (at 10 V) and is capable of handling up to 22A of current.
The IRF7815PBF is a P-channel enhancement-mode power MOSFET. It has an insulated-gate field-effect structure and uses a silicon substrate. It is constructed with the following structure: a P-type substrate, an N-type drain region, an N-type source region, and a P-type gate region. This structure creates a voltage-controlled current path from the source to the drain, which is controlled by the voltage applied to the gate. Depending on the voltage applied to the gate, the transistor can be turned on or off.
In its off-state, no current can flow from the source to the drain. When the P-channel gate voltage is increased, the electrons on the source are attracted to the gate, creating a low resistance channel from the source to the drain and allowing current to flow. This is known as the substitutional process. When the gate voltage is decreased, the electrons are repelled, and the connection is broken. In this sense, the IRF7815PBF is a voltage-controlled device.
Because of its low on-resistance and its ability to handle high current, the IRF7815PBF is suitable for use in a variety of applications. It is commonly used in motor control, power management, and Intelligent Systems. It is also suitable for power switching applications, including applications that require switching high loads rapidly, such as solenoids and relays. Additionally, it is suitable for damping applications, such as in soft start circuits. It is also suitable for use in audio and amplifier circuits.
The IRF7815PBF is a reliable and efficient device and is considered to be one of the most popular MOSFETs available. It offers excellent performance in a variety of applications and is easy to use. It is also easy to integrate into existing designs, making it great for hobbyists and engineers alike.
The specific data is subject to PDF, and the above content is for reference
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