IRF7759L2TR1PBF

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IRF7759L2TR1PBF transistors are used for various high power applications because of their excellent characteristics. They are efficient and durable and can provide reliable operation for long periods of time. IRF7759L2TR1PBF is a surface mount Power MOSFET from Vishay Intertechnology, which can be suited for different applications. It has very low on-state resistance and output voltage is also adjustable.

The IRF7759L2TR1PBF is a N-channel power MOSFET in a 3-pin TO-220 package (Figure 1). It is an HEXFET(r) Power MOSFET with exceptionally low on-state resistance and extremely low gate charge. The MOFSET is used as a power switch with an integrated driver and is used in different circuits.

Figure 1: 3-pin TO-220 Package

The IRF7759L2TR1PBF is available in a variety of packages and options. These include: TO-220, TO-263 and DPAK, as well as a range of maximum gate voltages and gate currents. The gate voltage range is from 10V to 100V, and the typical maximum gate current is 350mA. The maximum drain current and drain to source voltage are respectively 18A and 100V, and the typical on-state resistance is 140mΩ.

The working principle of an N-channel MOSFET is based on the capacitive charging and discharging of the gate. When a voltage is applied to the gate, the electron density in the channel is increased, leading to an increase in current conduction between the source and drain terminals of the device. The drain current is proportional to the gate voltage, while the gate current is proportional to the drain voltage. Therefore, the gate and drain can be used to control the drain current.

When the gate voltage is greater than the threshold voltage, the device is said to be in an “ON” state, allowing electrons to flow from the source to the drain. The drain current is proportional to the gate voltage, while the gate current is proportional to the drain voltage. When the gate voltage is less than the threshold voltage, the device is said to be in an “OFF” state and does not allow any current to flow from the source to the drain.

The IRF7759L2TR1PBF is used in a range of high power applications, such as in power supplies, battery charger and load switch circuits, automotive electronic systems, and power amplifiers. It can also be used in industrial equipment and motor control systems. It is a reliable and efficient device for various applications.

In summary, the IRF7759L2TR1PBF is a versatile and reliable N-channel MOSFET. It can be used in various high power applications and offers excellent characteristics. It has a low on-state resistance and adjustable output voltage, allowing for improved performance in different circuit applications. It is available in a variety of packages and options.

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