
Allicdata Part #: | IRF7413GTRPBFTR-ND |
Manufacturer Part#: |
IRF7413GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 13A 8-SOIC |
More Detail: | N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 7.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7413GTRPBF is a P-Channel MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor). It is a type of transistor that uses electrical signals to control the flow of the current. It is used in a variety of applications, such as in power supplies, amplifiers, driver circuits and more, and can be used in an array of different applications.
The IRF7413GTRPBF is made up of four different components; the gate, drain, source and body. The gate is the controlling element in the MOSFET and is the source of the electrical signal which can be used to control the flow of the current. The drain and source form junctions between which the current flows. The body, or substrate, is the body of the FET and also determines how the current flows.
The IRF7413GTRPBF has a low-power dissipation, which is ideal for applications that require low power consumption. Additionally, the device has an improved thermal performance due to an improved body connection. It is able to support a variety of typical operating temperatures ranging from -55°C to 200°C.
The working principle of the device is simple. When an electrical charge passes through the gate, the resulting electrical field changes the conductivity of the source and drain junction. This alters the conductivity of the flow, affecting the current passing through the device. The amount of current that can pass through the device depends on the size of the gate, the amount of voltage applied to the gate, and the type of device.
IRF7413GTRPBF is widely used in various applications, which include motor control, energy conversion, power switching, noise filtering, audio amplifiers, and more. It is often used to protect sensitive electronic components from the flow of the current. For example, it can be used in power supplies to provide a stable voltage and current flow to sensitive devices. The IRF7413GTRPBF is also widely used for data communications and as a temperature sensor.
The device also has many advantages over other MOSFETs, such as low noise, high input impedance, low switching times and improved efficiency. Additionally, it has good operational temperature range, which makes the device suitable for a wide range of operations.
In conclusion, the IRF7413GTRPBF is a P-Channel MOSFET which is used in a variety of applications. It is noted for its low power dissipation and improved thermal performance. It is often used to protect sensitive electronic components and is used in various applications, such as motor control, energy conversion, power switching and communication.
The specific data is subject to PDF, and the above content is for reference
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