IRF7807ATRPBF Discrete Semiconductor Products

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IRF7807ATRPBF is a source-up N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that was designed by International Rectifier Corporation, a semiconductor manufacturing company. It is a mature product that has been highly popular in the market, and is used in many applications. The IRF7807ATRPBF is a rugged and reliable device that is typically used in power management circuits. This MOSFET offers a low on-state resistance, low switching losses, and high efficiency in a compact package.

The IRF7807ATRPBF is constructed with an N-channel structure, which means that the conductive channel has been formed by the depletion of N-type dopant impurities from a semiconductor material. The device is a voltage-controlled field-effect transistor, so its conductivity is proportional to the voltage applied across the gate and source terminals. This allows a small signal to be used to control a larger current flow, which in turn can power large electronic circuits. This type of transistor is ideal for switching applications since it requires very little current to turn on or off and it also dissipates very little power when switching between on and off states.

The IRF7807ATRPBF is small and efficient, making it suitable for medium power applications with low on-state resistance. It has a drain-source on-resistance of 0.009 ohms, and its drain-source voltage breakdown is 60V. The device also exhibits good thermal behavior, with a RDS(on) temperature coefficient of 85 mV/°C and a thermal resistance of 140°C/W. The maximum junction temperature is +150°C and the maximum power dissipation is 160mW.

The IRF7807ATRPBF device is well suited for a wide range of applications, including battery-operated devices, power management circuits, and lighting circuits. It is often used in conjunction with a motor driver, for example, to allow a microcontroller to control the speed of a motor. It can also be used for motor speed control, motor protection, voltage clamping, LED lighting control, etc.

In summary, the IRF7807ATRPBF device is a reliable and efficient source-up N-channel MOSFET that offers low on-state resistance, low switching losses, and high efficiency. It is well suited for low power applications and is particularly useful in power management circuits. Its small size and efficiency also make it ideal for battery-operated applications. The device is a rugged, reliable, and economical solution that can be used for a wide variety of applications.

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