IRF7413ZGTRPBF Allicdata Electronics
Allicdata Part #:

IRF7413ZGTRPBFTR-ND

Manufacturer Part#:

IRF7413ZGTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 13A 8-SOIC
More Detail: N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7413ZGTRPBF datasheetIRF7413ZGTRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7413ZGTRPBF Application Field and Working Principle

The IRF7413ZGTRPBF is a single N-Channel Enhancement Mode MOSFET typically used in applications such as buck converters and DC/DC converters. Operating in a normally open configuration, the transistors\' gates allows current to flow through the drain and source when positively charged and acts as an electrical switch. As a result, it is primarily used to control high current applications and the power it operates at.

The N-Channel Enhancement Mode MOSFET

The N-Channel Enhancement Mode MOSFET is a type of MOSFET that does not require a gate-source voltage in order to conduct. Instead, the gate-source junction applied a negative voltage from the source to the gate in order to transmit current to the drain. The MOSFETs are widely used in various applications due to their ability to tune parameters such as the channel length, source voltage and current, channel width and gate charge.

The IRF7413ZGTRPBF is a type of single N-Channel Enhancement Mode MOSFET that uses a depletion type mode to switch the transistors. This MOSFET has a drain-source resistance of 0.023 Ohms, minimum and maximum drain to source breakdown voltages of 30 V/45 V and a gate threshold voltage of 3V. Its on-characteristics make it a suitable device for DC/DC converter and Buck Converter applications.

Working Principle

The IRF7413ZGTRPBF MOSFET operates utilizing the principles of a p-channel and n-channel enhancement mode MOSFETs. When a negative voltage is applied from the source side to the gate, a “tunnel current” is established between the source and the drain. This effectively increases the drain to source voltage and allows for a greater current flow. The transistor works only when sufficient gate-source voltage is applied; the higher the voltage, the greater the current.

The IRF7413ZGTRPBF is ideal for use in applications requiring high current flow, such as DC-DC converters and buck converters. As it operates using n-channel enhancement mode, it is also more suited for switching low voltage and low power signals.

Typical Applications

The IRF7413ZGTRPBF MOSFET is ideal for current switching applications where the current is limited and the voltage is low. It is also suitable for use in applications requiring higher gate source voltages and current flows, such as DC/DC converter applications. It can also be used in buck converter applications requiring higher current flows, such as AC/DC converters and battery charging applications.

The IRF7413ZGTRPBF can also be used in voltage regulator applications, as it is capable of providing a stable voltage supply while using a minimum current consumption.

Conclusion

The IRF7413ZGTRPBF is a single N-channel enhancement mode MOSFET typically used in applications such as DC/DC converters, AC/DC converters, buck converters, and battery charging applications. The MOSFET operates by allowing a tunnel current through the source and drain when a negative voltage is applied at the gate. The transistor works only when there is sufficient gate-source voltage, resulting in higher current flow. As a result, the IRF7413ZGTRPBF is ideal for applications requiring higher current switching and low voltage.

The specific data is subject to PDF, and the above content is for reference

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