| Allicdata Part #: | IRF7704TRPBFTR-ND |
| Manufacturer Part#: |
IRF7704TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 40V 4.6A 8-TSSOP |
| More Detail: | P-Channel 40V 4.6A (Ta) 1.5W (Ta) Surface Mount 8-... |
| DataSheet: | IRF7704TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 4.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF7704TRPBF is a member of the International Rectifier Corporation of Infineon Technologies IRF7000 Series of power MOSFETs. IRF7704TRPBF is an N-channel power MOSFET with a maximum drain-source voltage of 500V and a drain-source current rating of 30A. IRF7704TRPBF is a generic component used in a large variety of applications, including power supplies, motor controls, switchmode power supplies, sunroof controls, power charging systems and more. The component can be found in the market in a variety of forms, including surface-mount and through-hole, and offers low gate-threshold voltage and fast switching time.
The IRF7704TRPBF is an N-channel power MOSFET with an integrated insulated gate voltage. When voltage is applied to the gate, electrons accumulate on the drain side of the MOSFET, forming a channel between the source and drain. The voltage across the channel is referred to as the "on-state" voltage, and is proportional to the voltage applied to the gate. The electric current through the channel is known as the "drain current," and is determined by how much of the applied voltage is dropped across the on-state voltage. As the voltage across the drain-source is further increased, the MOSFET will eventually reach its maximum current and voltage rating.
The IRF7704TRPBF provides excellent performance in terms of switching time and low gate-threshold voltage. The device operates at a low on-state voltage and low gate-threshold voltage of 4.5V. This makes it ideal for use in switch-mode power supplies, where a low gate-threshold voltage is essential to reduce switching losses and increase efficiency. Additionally, the device has a fast switching time of less than 10ns, allowing it to respond quickly to changes in voltage and current.
In addition to its excellent performance characteristics, the IRF7704TRPBF is also highly reliable. The device is designed to meet the JEDEC quality assurance standards, ensuring long-term reliable operation. Additionally, the device is RoHS compliant and is designed to sustain high temperatures of up to +175°C. This makes it suitable for applications where long-term reliability and high temperature operation are essential.
The IRF7704TRPBF is an ideal component for any application requiring reliable power switching. Its low gate-threshold voltage and fast switching time make it an excellent choice for applications where low power loss and high efficiency are required. Additionally, its high reliability makes it suitable for applications where long-term reliable operation is essential. Whether it is used in a switch-mode power supply, power charging system, or motor control, the IRF7704TRPBF is an excellent choice for reliable, efficient power switching.
The specific data is subject to PDF, and the above content is for reference
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IRF7704TRPBF Datasheet/PDF