IRF9630L

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	800 mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.5A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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IntroductionThe IRF9630L is a high-voltage, low- resistance drain-to-source channeled enhancement mode Field Effect Transistor (NTEFET). This N-channel MOSFET is designed and manufactured to provide good switching and linear characteristics. Previous generations of N-channel FETs used a separate JFET gate and gated p-channel FETs to achieve similar switching performance. But the IRF9630L uses an insulated gate and will require only one driver device compared to previous versions.IRF9630L Application FieldsThe IRF9630L field effect transistor has broad applications in various industries. It has been used in various industries such as automotive, computer, communications, audio, industrial controls and more due to its high voltage and ability to switch fast.In automotive applications, the IRF9630L can be used as a switching device for DC-DC converters, power management switch, power supply switch and Active Brake.It can also be used for power switching in computers such as switching power supply, battery charging, and system power control.In communications, it can be used as switching and transmission control, transmitters and receivers, power control circuits and more.In audio and video production, it can be used for analog switching, audio switching, and control signals applications.In industrial systems, it is used in servo amplifiers, motor/spindle controllers, power transfer relays, and other similar applications.Working Principle The IRF9630L field effect transistor’s working principle is based on the arrangement of a source, a drain, and a gate. A small DC voltage applied to the gate turns the transistor on or off. The gate’s electric field attracts majority and minority carriers from the source.When the transistor is in the off state, carriers from the source are attracted to the gate and are repelled from the drain. This creates a depletion layer (or depletion zone) around the drain, preventing current from flowing from source to drain.When the transistor is turned on, the gate voltage is increased and the magnetic field of the gate pulls the carriers away from the drain and across the channel. This creates a channel region (or channel domain) between the source and the drain and a current can now flow from source to drain. This will be a current determined by the voltage applied to the gate and the drain current.The IRF9630L is an N-channel MOSFET and its structure is such that it has its source and drain connected across a short-channel length. This allows the transistor to operate at very high speed with very low drain-source capacitance and fast turn-on and turn-off times.ConclusionThe IRF9630L MOSFET has a wide range of applications in various industries due to its high voltage, fast switching and low resistance drain-to-source characteristics. It can be used for power management, switching and transmission control, audio switching, servo amplifiers, and many other applications. The IRF9630L works by using a small DC voltage to the gate to turn the transistor on or off. This creates a depletion layer or a channel domain, depending on if the transistor is off or on, respectively. This allows the transistor to operate at high speeds with very low drain-source capacitances.

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