IRFS17N20DTRL

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	170 mOhm @ 9.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The IRFS17N20DTRL is a single-channel enhancement-mode field-effect transistor (FET) from Infineon Technologies. This FET has a low on-resistance and high-current capability, which makes it suitable for a variety of applications, such as in power management, lighting, motor control and consumer applications. This article will discuss the application field and working principle of the IRFS17N20DTRL.

Applications

The IRFS17N20DTRL is primarily used in power management and motor control applications, as it has a maximum channel drain current of 20A. This makes it suitable for medium-voltage and high-current applications, such as in power switches, motor control and lighting. It also has a low on-resistance of 17mΩ, making it suitable for energy-efficient applications. In addition, the IRFS17N20DTRL can be used in various consumer applications, such as in power supplies and household appliances. It has a breakdown voltage of 40V and a maximum gate-source voltage of 20V, making it suitable for applications such as AC/DC converters, lighting and printer power supplies.

Working Principle

The IRFS17N20DTRL is a single-channel enhancement-mode FET, meaning that it requires a small amount of gate-source voltage to control the drain-source current. When a positive gate-source voltage is applied, electrons are injected into the channel, which results in a current conduction between the drain and the source. As the gate-source voltage is increased, the current conduction between the drain and source is also increased.When a negative gate-source voltage is applied, electrons are repelled from the channel, and the current between the drain and the source is reduced. This is known as the “turn-off” effect, and is used to control the flow of current between the drain and the source.

Conclusion

The IRFS17N20DTRL is a single-channel FET from Infineon Technologies that has a low on-resistance and high-current capability. This makes it suitable for a variety of power management and motor control applications, as well as in consumer applications such as power supplies and household appliances. It works by using a small amount of gate-source voltage to control the current conduction between the drain and the source, which can be used to turn the FET on or off.

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