IRFSL5615PBF Allicdata Electronics
Allicdata Part #:

IRFSL5615PBF-ND

Manufacturer Part#:

IRFSL5615PBF

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 33A TO-262
More Detail: N-Channel 150V 33A (Tc) 144W (Tc) Through Hole TO-...
DataSheet: IRFSL5615PBF datasheetIRFSL5615PBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.90000
10 +: $ 0.87300
100 +: $ 0.85500
1000 +: $ 0.83700
10000 +: $ 0.81000
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 144W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFSL5615PBF is a popular single N-channel power MOSFET produced by International Rectifier. It was designed for high-voltage operation and high current capacity along with low Rds(on). IRFSL5615PBF is the perfect choice for high-voltage applications such as motor control, power conversion and power supply. In this article, we will discuss the application fields for IRFSL5615PBF along with its working principle.

Application Fields

IRFSL5615PBF is an N-channel MOSFET, meaning that it is best suited for applications which require controlled switching of high voltage, high power, and relatively low current. Some of the application fields for IRFSL5615PBF are:

  • Motor control:IRFSL5615PBF is ideal for high-voltage, high-power applications such as motor control. The MOSFET’s low Rds(on) allows for effective switching of the motor’s voltage, while its 100V breakdown voltage ensures that there is no undesired current leakage.
  • Power conversion:IRFSL5615PBF is often used in power conversion and switching applications requiring high voltage and high current capacity. It can be used to convert AC power to DC power, allowing for more efficient use of the energy produced.
  • Power supply:The MOSFET can also be used in power supply applications, as it is capable of handling very high currents and voltages. It can be used as part of a regulated power supply, or as part of a switching power supply.

Working Principle

IRFSL5615PBF operates according to the principle of field effect transistor (FET) operation. In a FET, a voltage applied to the device’s gate causes a change in the current flow between the source and the drain. This change in current is known as a drain current, or ID, and occurs when a voltage above a certain threshold level is applied to the gate. This threshold level is known as the threshold voltage, or VT. The greater the gate voltage, the greater the drain current, allowing for precise control of the current flow.

Once the gate voltage is applied to the MOSFET, it is considered to be “on”. When the gate voltage is removed, the MOSFET is “off”. The resistance between the source and the drain, known as Rds(on), is what determines how much current will flow through the MOSFET when it is on. IRFSL5615PBF has a low Rds(on) which allows for fast switching and precise control of the current flow.

In summary, IRFSL5615PBF is an N-channel power MOSFET that is best suited for high-voltage applications such as motor control, power conversion, and power supply. The device operates according to the principle of FET operation, where the application of a voltage above a certain threshold to the gate allows for precise control of the current flow. The device has a low Rds(on), allowing for fast switching and effective management of the current flow.

The specific data is subject to PDF, and the above content is for reference

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