Allicdata Part #: | IRFS7437PBF-ND |
Manufacturer Part#: |
IRFS7437PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 40V 195A D2PAK |
More Detail: | N-Channel 40V 195A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | IRFS7437PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET®, StrongIRFET™ |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7330pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRFS7437PBF Application Field and Working Principle
IRFS7437PBF is a Flexible Enhancement Mode Field Effect Transistor (FET) designed for low voltage applications. It has a low on-resistance, low gate threshold voltage and low capacitance, making it ideal for use in high speed switching applications. This device is mainly used in power management, switch-mode power supplies, motor control and other power-control applications.
Working Principle
A FET consists of three terminals: the source, gate, and drain. The IRFS7437PBF is an n-channel FET, meaning that current flows from the source to the drain when a small voltage is applied to the gate. In other words, the IRFS7437PBF is normally off, and only turns on when the gate voltage is applied.
The IRFS7437PBF has an internal gate oxide layer which acts as an insulator between the gate and the channels. When the voltage applied to the gate is increased, the oxide layer\'s resistivity decreases, allowing current to flow from the source to the drain. The on-state resistance of the FET is determined by the thickness of the gate oxide layer and the level of channel doping.
The IRFS7437PBF also has a very low drain-source on-resistance (RDS-on). This is a measure of how easily the FET can conduct current when turned on. Because the RDS-on is low, the FET can be used in high-speed switching applications.
Application Field
The IRFS7437PBF is mostly used in power management and switch-mode power supplies. It can be used as a switch to control the flow of current in the circuit, as well as a voltage regulator. It can also be used in motor control applications, where its low on-resistance and low gate threshold voltage are beneficial.
The IRFS7437PBF is also well suited for use in low voltage, low power applications such as LED lighting. Its low gate threshold voltage and low RDS-on makes it ideal for use in applications where efficiency and precision control is desired.
In conclusion, the IRFS7437PBF is a flexible, low voltage FET. It has a low on-resistance, low gate threshold voltage, and low capacitance, making it ideal for use in power management, switch-mode power supplies, motor control, and low voltage, low power applications.
The specific data is subject to PDF, and the above content is for reference
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