IRFSL4228PBF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4530pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	107nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	15 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	83A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRFSL4228PBF is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device is used as an electronic switch in many different systems. It has many different applications, ranging from motor controllers to radio frequency systems and from power converters to solar inverters.The IRFSL4228PBF is a vertical double-diffused MOSFET that is designed for low voltage applications up to 100V. This device has a max drain current of 2.8A and can handle drain to source voltages up to 100V. The RDS_on of the device is 0.038 Ω, making it suitable for power efficiency applications. The device also has a low gate to source threshold voltage of 1.8V, making it ideal for switching applications that require low voltage control signals.One of the key features of the IRFSL4228PBF is its low on-resistance and high-speed switching capabilities. The device is often employed as a low-loss switching element in motor control, radio frequency and power converter applications. It is also used as a voltage regulator in solar inverters, where its fast switching time and low conduction loss contribute to higher efficiency.The working principle of the IRFSL4228PBF is that it is an enhancement-mode MOSFET, which means that its gate voltage must be higher than the threshold voltage before it turns on. The IRFSL4228PBF has a threshold voltage of 1.8V, which is significantly lower than most other MOSFETs. This allows the device to be switched on at lower voltages and with lower current, resulting in a more efficient system.The device also has a low gate charge, which is the amount of gate current required to turn the device on. This is important in applications where the gate current is limited, such as solar inverters. The gate capacitance of the IRFSL4228PBF is also low, which allows it to switch faster than other MOSFETs. This can be beneficial in high-speed applications, such as motor controllers.Overall, the IRFSL4228PBF is a versatile device that can be used in many different types of circuits. It is particularly useful in applications that require low voltage control signals, low conduction loss and fast switching times. It is a popular choice for motor control, radio frequency and power converter applications, as well as solar inverters.

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