| Allicdata Part #: | IRFS11N50ATRLP-ND |
| Manufacturer Part#: |
IRFS11N50ATRLP |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 11A D2PAK |
| More Detail: | N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount TO... |
| DataSheet: | IRFS11N50ATRLP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.27000 |
| 10 +: | $ 1.23190 |
| 100 +: | $ 1.20650 |
| 1000 +: | $ 1.18110 |
| 10000 +: | $ 1.14300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 170W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1423pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRFS11N50ATRLP is a single N-channel MOSFET, produced by International Rectifier, which is suitable for use in various circuits that require high-speed switching operation. In this article, we will discuss the application field and working principle of IRFS11N50ATRLP.
Application Field
IRFS11N50ATRLP is suitable for use in switched mode power supplies (SMPS), inverters, converters, DC-DC applications, as well as battery powered systems. It is also ideal for high-frequency motor control, and as a voltage level-shifter for logic and gate drive circuits.
The device has a high input-output impedance ratio and a low output capacitance, making it ideal for switching applications where speed is of critical importance. This makes it a very useful device for AC to DC conversion tasks. Additionally, it has excellent switching characteristics, with a fast transition time and low on-state resistance.
The device\'s low threshold voltage and high transconductance mean it is suitable for high-voltage applications, such as motor control and level-shifting. It also has an extended safe operating area, meaning that it can safely handle higher voltage and current than other similar devices.
Working Principle
IRFS11N50ATRLP is a three-terminal MOSFET (metal-oxide-semiconductor field-effect transistor), with the terminals being the gate, source, and drain. The gate is the control terminal of the device, and when a positive voltage is applied to it, this causes a channel to form between the source and drain. This channel has a high resistance, meaning that the current between the source and drain is limited.
When the channel is formed, a very small amount of voltage is dropped between the source and drain, resulting in a low output impedance. This means that the device can handle large output currents, while still providing excellent switching characteristics. Additionally, the channel formation also causes the input and output capacitance of the device to be low, which reduces power losses.
In summary, the IRFS11N50ATRLP is a high-speed single N-channel MOSFET, which can be used in a wide range of switching applications. It has excellent switching characteristics, a high input-output impedance ratio, low output capacitance, and an extended safe operating area. This makes it an ideal choice for applications where speed and efficiency are of paramount importance.
The specific data is subject to PDF, and the above content is for reference
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IRFS11N50ATRLP Datasheet/PDF