IRFS23N15DTRLP

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Introduction

IRFS23N15DTRLP is a kind of power field-effect transistor (also referred to as FET). It is a n-channel MOSFET (metal-oxide-semiconductor FET) with a low on-resistance (RDS(on)), and a high maximum voltage, drain-source voltage (VDSS).

Application Field

This type of MOSFET is particularly suitable for automative applications such as high efficiency power supplies as well as automotive electronic systems and audio/video systems. It also finds an extensive application in communications, and industrial equipments.

Features

IRFS23N15DTRLP is a low-voltage MOSFET with a maximum drain-source breakdown voltage of 55V. Its RDS(on) is 15mΩ (@VGS = 10V), which makes it one of the most efficient MOSFETs in terms of power efficiency. it has a very low gate charge (Qg) of 10nC and a low total gate charge (Qg(tot)) of 90nC, which enables it to have a fast switching speed. The MOSFET also features an improved Avalanche energy rating (EAS), which makes it very suitable for automotive applications that require a high current carrying capability and optimized power dissipation.

Working Principle

IRFS23N15DTRLP is a n-channel MOSFET which utilizes two junctions at the channel area of a semiconductor device; one junction is from the source to drain and the other from the gate to the drain. When a positive potential is applied to the gate of the device, it causes a positive potential to build up at the junction between the gate and the drain and thus creates an inversion layer at the surface of the MOSFET. This inversion layer acts like an insulator and thus prevents current from flowing between the source and the drain, thereby allowing current to flow only if the gate voltage is equal to or greater than the threshold voltage. It is thus the voltage across the gate and the source of the device that determines the current flow through the device.

Internally, IRFS23N15DTRLP has two types of threshold voltage; one for when the device is in the OFF-state (gate-source voltage below the threshold) and the other for when the device is in the ON-state (gate-source voltage greater than the threshold). When the device is in the ON-state, its gate capacitance (Qg) is low and hence it can quickly switch on and off. As the current flowing through the device increases, it causes the drain-source voltage (Vds) to rise and this in turn increases the voltage across the gate and source of the device. The higher voltage at the gate causes the capacitance (Qg) to increase and hence the switching speed of the device slows down. As a result, the IRFS23N15DTRLP is capable of operating at very high switching frequencies.

Conclusion

IRFS23N15DTRLP is a n-channel MOSFET which is designed for power supply applications and automotive electronic systems. It has a low on-resistance (RDS(on)), a high maximum voltage, drain-source voltage (VDSS), and a very low gate charge (Qg). It is capable of switching at very high frequencies and provides increased power efficiency. Thus, it is a power device ideal for automotive, communications, and industrial equipment applications.

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