
Allicdata Part #: | IRFSL4620PBF-ND |
Manufacturer Part#: |
IRFSL4620PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 24A TO262 |
More Detail: | N-Channel 200V 24A (Tc) 144W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 144W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 77.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFSL4620PBF is a Power MOSFET. It is a single device ideal for use in power conversion and high power switching applications. It has a voltage rating of 30V and a current rating of 46A. The device features a high breakdown voltage and a low ON resistance with fast switching speeds, making it an ideal choice for use in a wide range of high power applications.
The IRFSL4620PBF can be used in a variety of applications, including: motor drives (DC motor control, brushless DC motor control, stepper motor control, and inverter drives); DC/DC converters; inverters; power supplies; motor controllers; UPS power supplies; switched mode power supplies; and general high-power applications. It can be used in both linear and switching power supply applications, and can be used for both AC and DC power supply applications.
The working principle of the IRFSL4620PBF is based on the physics of the electron motion. The device is a four-terminal MOSFET device, meaning that it contains four terminals: the gate, drain, source, and body. The gate terminal is the control point of the device, meaning it is where the voltage is applied to control the device. The drain and source terminals are used to connect the MOSFET device to the electrical load which needs to be controlled. The body terminal is also known as the substrate, and it is used to provide a return path for the electrons. When the gate is activated, the electrons are allowed to flow from the source to the drain, thus allowing electrical current to flow.
The IRFSL4620PBF is a versatile device, and it can be used in various power switching applications. It is designed to be used with other discrete components such as transistors, diodes, and IGBTs in order to control and manage the electrical power delivered to the load. The device can be used to regulate the voltage, current, and frequency of the power delivered to the load. Furthermore, it can also be used to control the thermal aspects of the system, such as temperature and heat dissipation. Additionally, it can be used for EMI filtering, inrush current duration control, and soft switching functions.
Overall, the IRFSL4620PBF is a versatile, high-power device which offers excellent performance in a wide range of applications. It has a high voltage rating and a low ON resistance, making it an ideal choice for use in power conversion and high power switching applications. It is also extremely efficient and fast switching, making it an ideal choice for use in a variety of DC/DC and AC/DC applications. Additionally, it is highly reliable and durable, making it a great choice for any application requiring high power reliability.
The specific data is subject to PDF, and the above content is for reference
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