IRFS7787TRLPBF

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The IRFS7787TRLPBF is a series of single N-channel MOSFETs (metal-oxide-semiconductor field effect transistors) used in high efficiency power supply design and power switching applications. It is designed to reduce ‘on-state’ switching losses and improve the utilization of power. With a high current rating and lower quiescent power consumption relative to other MOSFETs, these transistors provide a viable option for powering systems that require high levels of reliability and/or performance. In this article, we will cover the application field and working principles of the IRFS7787TRLPBF.

Application Field

The IRFS7787TRLPBF is suitable for switching and linear applications which require high performance power supplies and builds. Its high operating voltage range makes it suitable for use in a variety of applications, such as Internet of Things (IoT) devices, smart meters, mains powered applications, and automotive systems. The IRFS7787TRLPBF is often used in high efficiency dc-to-dc converters, ac-to-dc switching power supplies, and automotive chargers. With a maximum drain-source voltage of 600V and a low ‘on-state’ resistance (RDS(on)), the IRFS7787TRLPBF is also ideal for high-voltage industrial, data communications, and computing applications.

Working Principle

The IRFS7787TRLPBF operates as an enhancement-mode MOSFET, meaning it requires a positive gate-to-source voltage for the channel between the drain and source to open. Current will flow between the source and drain if the gate-source voltage (VGS) is greater than the threshold voltage (VTH). Once the voltage exceeds VTH, the current in the channel increases exponentially as the gate voltage rises. This is known as the transistor’s transconductance and can be used to accurately control the flow of current between the source and drain.

The gate-source voltage (VGS) of the IRFS7787TRLPBF typically ranges from 0 to +12V. When VGS is lower than the threshold voltage (VTH), the transistor is ‘OFF’ and no current will flow between the source and drain. When VGS is greater than VTH, the transistor is ‘ON’ and current can flow from the source to the drain. The maximum current that can be conducted through the transistor is determined by the maximum drain-source voltage (VDS) rating. This current rating is known as the continuous drain current (ID) and typically ranges from 7.8A to 8.4A for the IRFS7787TRLPBF.

The IRFS7787TRLPBF is designed to reduce its ‘on-state’ switching losses and improve the efficiency of power switching applications. The low ‘on-state’ resistance (RDS(on)) enables the IRFS7787TRLPBF to handle higher currents and dissipate less power than other MOSFETs of equivalent size and voltage rating. This makes the IRFS7787TRLPBF a suitable choice for power supplies that require reliable performance and/or high efficiency.

Conclusion

In conclusion, the IRFS7787TRLPBF is a series of single N-channel MOSFETs designed for high efficiency power supply design and power switching applications. These transistors are suitable for a variety of applications, such as IoT devices, smart meters, mains powered applications, and automotive systems. The IRFS7787TRLPBF has a high operating voltage range, a low ‘on-state’ resistance (RDS(on)), and a high continuous drain current (ID) rating. These desirable features make the IRFS7787TRLPBF a suitable choice for high voltage industrial, data communication, and computing applications.

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