IRFS17N20DTRR

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The IRFS17N20DTRR is a transistor in the single MOSFET product range from Infineon Technologies AG. MOSFET stands for Metal–Oxide–Semiconductor Field-Effect Transistor, which is the most common type of field-effect transistor. The IRFS17N20DTRR is specifically designed for use in applications that require high voltage operation in a compact package.The IRFS17N20DTRR is a N-channel MOSFET that features very low threshold voltage, high drain current, fast switching and high-speed capability. Its N-channel MOSFET structure and integrated reverse body diode make it ideal for applications that require high efficiency and low power dissipation. It has a drain-source breakdown voltage of 20 V and drain current capability of 17 A at 25°C temperature. The IRFS17N20DTRR is also well-suited for applications requiring high-current switching at low-voltage.The IRFS17N20DTRR is suitable for a variety of electronics applications. These include power supply control, power MOSFET gate drive, power supply design, logic level translation and conversion, audio amplifier circuity, lighting ballast, motor and appliance controls, and HVAC controls. The IRFS17N20DTRR can also be used in automotive and other applications that require high reliability and fault-tolerance.The IRFS17N20DTRR is a three-terminal device and operates using the principle of bulk-shunting. In bulk-shunting, a large electric current runs from the source terminal to the bulk section between the source and drain regions. This current creates a strong electric field, which causes electrons to move from the source to the drain regions, resulting in a ON or OFF switching state of the device. Additionally, the IRFS17N20DTRR has a gate-source capacitor, which helps to control the drain-source current.In summary, the IRFS17N20DTRR is a single, N-channel MOSFET transistor that is suitable for high-voltage, high-power applications. It features low threshold voltage, fast switching, and high-speed operation. The IRFS17N20DTRR is a three-terminal device and operates using the principle of bulk-shunting. It is well-suited for a variety of electronics applications, including power supply control, power MOSFET gate drive, power supply design, logic level translation, audio amplifier circuity, lighting ballast, motor and appliance controls, and HVAC controls. The device is also suitable for automotive applications that require high reliability and fault-tolerance.

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