Allicdata Part #: | IRFS3107TRL7PPTR-ND |
Manufacturer Part#: |
IRFS3107TRL7PP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 240A D2PAK7 |
More Detail: | N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2... |
DataSheet: | IRFS3107TRL7PP Datasheet/PDF |
Quantity: | 3200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 370W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 160A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFS3107TRL7PP is a single-n-channel depletion-mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor, or MOSFETs), specifically designed for applications requiring low on-state resistance and low-voltage operation. It is also known as an enhancement mode MOSFET, because it is most often used to switch between low and high signal levels.
The IRFS3107TRL7PP has a number of unique electrical and mechanical characteristics that make it suitable for a wide range of applications. First, its operating current rating is 9.5 A, which makes it ideal for applications requiring high current switching such as automotive and industrial applications. Additionally, its ultra-low on-state resistance, low gate-source capacitance, and its maximum operating temperature of 175°C make it an ideal choice for power-applications such as laptop mother boards and power supply designs.
The working principle of the IRFS3107TRL7PP is based on the application of a gate voltage, or gate-source voltage, to the device to control the amount of current flowing through the device. When the gate voltage is increased, a channel is created in the MOSFET, allowing electrons to flow from the source to the drain. Conversely, when the gate voltage is decreased, the channel is shut off, preventing electrons from flowing.
The IRFS3107TRL7PP is most often used in applications where low-power switching and low-voltage operation are required, such as in power supplies, motor controls, and solid-state relays. Its low on-state resistance and low gate-source capacitance also make it suitable for use in high-speed switching applications.
The IRFS3107TRL7PP is also well-suited for use in high frequency switching applications such as switching regulators, DC/DC converters, and power amplifiers. Its on-state resistance and high-temperature operation allow it to be used in high-voltage and high-temperature applications as well.
Overall, the IRFS3107TRL7PP is a highly-flexible and versatile device that can be used in a wide range of applications that require low-power switching and low-voltage operation. Its low on-state resistance and high-temperature operation make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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