Allicdata Part #: | IRFS3207TRLPBFTR-ND |
Manufacturer Part#: |
IRFS3207TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 170A D2PAK |
More Detail: | N-Channel 75V 170A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | IRFS3207TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFS3207TRLPBF is a type of Field Effect Transistor, also known as an FET, and is specifically a single MOSFET. It is classified as a type of semiconductor that uses silicon as an insulator, with a three-terminal device having an active region with a compliant gate.
The IRFS3207TRLPBF has a 40v drain to source breakdown voltage, with a drain to source current of continuous and pulsed of 246A and 580A respectively. The on-state resistance is 0.0069 ohm, with a turn-on delay of 2.6ns and a rise time of 20ns.
MOSFETs are used in many different types of applications because they are easy to use, durable, and reliable. This type of transistor is commonly used in power conversion and supplies, switching regulators, motor control, UPS systems, and many other applications requiring high voltage and current capacity. For this reason, the IRFS3207TRLPBF is often used in industrial and automotive applications. In addition, it is also suitable for use in most linear power supplies, as well as various types of analog and digital circuits.
The working principle of the IRFS3207TRLPBF is based on the phenomenon of a capacitor that is coupled between the gate and the source of the device. When voltage is applied to the gate, it creates an electric field which is passed to the substrate and induces a charge, allowing current to pass through the channel. The gate then controls the amount of current that is allowed to flow.
The IRFS3207TRLPBF is operated using two general modes of operation. The first is known as “pulse width modulation” (PWM) mode, which is used for more precise control. In this mode, the amount of current and voltage is controlled by activating and deactivating the gate quickly in a particular sequence, creating a pulsewidth, which controls the amount of current. The second mode is known as “linear operation”, which is used for less precise control. In this mode, the amount of current is controlled by varying the amount of voltage applied to the gate.
The IRFS3207TRLPBF has several advantages over other types of transistors. For example, it is less susceptible to noise, and usually has a much lower on-resistance. Additionally, it is able to operate at higher power levels without significant power dissipation. As a result, it is a popular choice for many applications where simplified control, reduced power consumption, and high efficiency are desired.
In conclusion, the IRFS3207TRLPBF is a type of MOSFET transistor which is used in many different types of applications. It offers excellent performance due to its low on-resistance, low noise, and high efficiency. It can operate in two different modes – pulse width modulation and linear operation – and can be used in various power conversion and supply, motor control, and UPS systems, as well as in analog and digital circuits. It is a robust and reliable solution for many different types of industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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