Allicdata Part #: | IRFS3806PBF-ND |
Manufacturer Part#: |
IRFS3806PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 43A D2PAK |
More Detail: | N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D2PA... |
DataSheet: | IRFS3806PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15.8 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRFS3806PBF is an N-channel MOSFET which is categorized as single FETs/MOSFETs which is manufactured by International Rectifier Corp. It is used in various applications requiring enhancements for surfaces and for drive current. This MOSFET has an On resistance of 39 mOhms. It has maximum operating junction of 150 degrees Celsius, a maximum operating temperature of 150 degrees Celsius, and a maximum storage temperature of 150 degrees Celsius.
The IRFS3806PBF MOSFET is typically used in switching applications such as in HVAC, lighting and heating control, motor driver applications, low-side and high-side switches, automotive applications, communication systems, instrumentation applications and power switches. This MOSFET can also be used in power management for computers, wireless and wired systems, displays, and embedded systems. Due to its low gate-source ON–resistance, it is also suitable for high-speed switching and low-power-loss applications.
The IRFS3806PBF is composed of four pins which provide an avalanche type of operation. The source pin is connected to the drain pin through a channel which is inversely polarized. The channel is between the MOSFET drain pin and the MOSFET source pin. When voltage is applied between the gate and the source pin, the channel opens allowing current to flow between the drain and the source pin. The resistance of the channel is determined by the amount of voltage applied, and the channel is able to be turned on and off quickly which allows it to be used in high-speed switching applications.
The core feature of the IRFS3806PBF is its low gate-source ON–resistance which is typically 39 mOhms and its low output capacitance which is typically 8.3 pF. This implies that it has a low voltage drop-out or current flow during switching operations which is beneficial for high-speed switching applications requiring fast switching times, and low-power-loss applications. The IRFS3806PBF also utilizes N-channel MOSFETs which are built using lateral-type construction which is relatively smaller in size compared to normal P-type MOSFETs. This makes it suitable for applications requiring a low package profile
In conclusion, the IRFS3806PBF application field consists of many areas such as HVAC, lighting and heating control, motor driver applications, low-side and high-side switches, automotive applications, communication systems, instrumentation applications and power switches. Additionally, it is also used in power management for computers, wireless and wired systems, displays, and embedded systems. It has a maximum operating temperature of 150 degrees Celsius and has a low gate-source ON–resistance which is typically 39 mOhms. It also has a low output capacitance which is typically 8.3 pF. It has many benefits such as fast switching time and low power losses.
The specific data is subject to PDF, and the above content is for reference
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