IRFS654B_FP001

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	140 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	123nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	3400pF @ 25V
FET Feature:	--
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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IRFS654B_FP001 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a breakdown voltage of 650 volts and a maximum drain current of 200A. It is designed to be used in various applications such as motor control, high-voltage DC-DC converters, switching power supply, battery management, and high voltage switching. A MOSFET is an electron device that uses a gate to control the conduction between source and drain terminals of the device, which are remote from it (hence the name “field effect transistor”). A MOSFET works by having a voltage applied between the drain and source of two separate terminals of the device, which creates an electric field between them that makes an electron flow through the channel of the device. When the gate of the MOSFET is connected to the source, it effectively opens the electron flow between the source and the drain. IRFS654B_FP001 is a cost-effective N-channel enhancement-mode MOSFET that offers optimal performance in applications requiring high-voltage, high-current handling capability with low impedance and temperature stability. This MOSFET features a low gate-source threshold voltage of 1.5V, high conductance of 200A, and maximum drain-source breakdown voltage of 650V. It also has a fast switching time of 2.3ns, making it suitable for applications that require speed and response. The device is also commonly used in switching power supplies, such as in laptop and battery chargers, or in high-voltage DC-DC converters. In these types of applications, the low on-state resistance and low gate-charge of the IRFS654B_FP001 allows for efficient, cost-effective operation. The device is also capable of high voltage, current and power handling, making it an ideal choice for high-power applications.In other high-voltage switching applications, the IRFS654B_FP001 can be useful for providing a controllable, fast-switching countermeasure for higher-voltage power supplies. It can also be used to implement a fast-response, efficient circuit element in battery management systems. Other applications include motor control, HVAC, bridge rectification, and automotive systems. Overall, the IRFS654B_FP001 is a reliable and cost-effective MOSFET device, suitable for a variety of applications in high-voltage, high-current handling, and fast-switching systems. The device features a combination of low gate-source threshold voltage, high conductance, and temperature stability, making it an ideal choice for applications requiring both cost efficiency and performance.

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