IRFS7540TRLPBF Allicdata Electronics
Allicdata Part #:

IRFS7540TRLPBFTR-ND

Manufacturer Part#:

IRFS7540TRLPBF

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 60V 110A D2PAK
More Detail: N-Channel 60V 110A (Tc) 160W (Tc) Surface Mount D²...
DataSheet: IRFS7540TRLPBF datasheetIRFS7540TRLPBF Datasheet/PDF
Quantity: 1000
800 +: $ 0.86254
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFS7540TRLPBF is a power metal-oxide-semiconductor field-effect transistor (MOSFET). It is a high-voltage/high-current power MOSFET with significant current and power handling capabilities. As such, it is a commonly used type of MOSFET in many electronics applications, especially power electronics designs.

The IRFS7540TRLPBF belongs to the single-channel, depletion-mode MOSFET family. This means that the transistor permanently conducts a current when no voltage is applied to its gate, the drain current being a fixed function of (the voltage between) drain and source. This type of device has a negative temperature coefficient, meaning its resistance decreases with increasing temperature.

It is a power MOSFET, supplied with low-voltage gate-drive requirements and a small footprint that ensures very good thermal resistance. It includes an integral avalanche-resistant structure and fast recovery diodes with negligible reverse-recovery time. This makes it suitable for use as a power switch in various switching applications that require high load current and fast switching times.

The IRFS7540TRLPBF is manufactured using the D-mode design which enables it to withstand higher voltage drops and withstands high-speed protection turn-off current. Its tight gate threshold voltage control also provides improved low power performance when the gate is held at the same threshold voltage for different load currents. The device is controlled by an input signal applied to the gate source terminals allowing the current flow from the drain to source to be controlled.

The low on resistance of the IRFS7540TRLPBF makes it suitable for use in high-frequency switching applications where low on-state resistance is important. It is best used with a heat sink and serves as an ideal choice for power converters and high current drivers. The maximum continuous drain current is 60A, while the maximum continuous drain voltage is 40V. It also has a drain-source breakdown voltage of 500 volts (VDSS).

The IRFS7540TRLPBF provides high power-handling capability, wide voltage ranges, and low on-resistance capabilities and with its low gate-charge characteristics, it offers excellent power efficiency. Its power efficiency also extended to its low gate-to-drain capacitance. This makes the device capable of handling high switching frequency which is important for space-constrained applications and also allows better performance from end-user applications.

The IRFS7540TRLPBF can be used in a variety of applications such as: switching power supplies, DC-DC converters, motor control systems, power amplifiers, energy-saving lighting systems, and automotive systems. Additionally, it is also suitable for use in low-side switch, high-side switch, positive voltage regulator module (VRM), power stage architectures, and ZVS/ZCS applications.

In conclusion, the IRFS7540TRLPBF is a powerful MOSFET with excellent capabilities and considerable current and power handling abilities. It can be used to control current flow in many electronics applications and is suitable for use in numerous fields, especially power electronics designs. Its tight gate threshold voltage control and low gate-to-drain capacitance enable it to handle high frequency switching. It is also extremely easy to handle and is suitable for a wide range of end-user applications.

The specific data is subject to PDF, and the above content is for reference

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