IRFS7734PBF

Vgs(th) (Max) @ Id:	3.7V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	290W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10150pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	270nC @ 10V
Series:	HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	183A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRFS7734PBF is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) produced by International Rectifier. It can be used for various applications including power electronics, general purpose switching and amplifier applications. This article will provide an overview of the applications and working principle of the IRFS7734PBF.ApplicationsThe IRFS7734PBF, which operates in enhancement mode, can be used in a variety of applications. It is particularly well-suited for use in power electronics circuits such as DC-DC converters, switch mode power supplies (SMPS), motor drives, and other power supply circuits. It can also be used in various communications applications, including RF power amplifier and switches, as well as in high frequency circuits.The IRFS7734PBF has been designed for use in harsh environments where vibration, temperature extremes, or other factors may cause other transistors to fail. It features high-current and high-voltage ratings, and its size and weight make it an ideal choice for use in high density applications.Working PrincipleThe IRFS7734PBF is an N-channel MOSFET, meaning that current is able to flow through the device when the gate voltage exceeds the threshold voltage. This is known as the "enhancement mode," as the voltage of the gate is used to "enhance" the current flow through the device.The threshold voltage is set by the manufacturer and can vary from device to device. It is typically in the range of 4 to 5 volts. The gate voltage must exceed this value in order for the device to begin conducting current.Once the gate voltage has exceeded the threshold, it is possible to control the device with the gate voltage. Increasing the gate voltage increases the amount of current that will flow through the device, allowing for precise control over the output current.ConclusionThe IRFS7734PBF is an N-channel MOSFET manufactured by International Rectifier that can be used for various applications. It is well-suited for use in power electronics circuits, communications applications, and high frequency circuits. It has high-current and high voltage ratings, and is designed for use in harsh environments. The device operates in enhancement mode, meaning that the gate voltage must exceed the threshold voltage before current can flow through the device. Once the gate voltage has exceeded the threshold, it is possible to control the amount of current that will flow through the device by adjusting the gate voltage.

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