| Allicdata Part #: | IRFSL3307-ND |
| Manufacturer Part#: |
IRFSL3307 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 130A TO-262 |
| More Detail: | N-Channel 75V 130A (Tc) 250W (Tc) Through Hole TO-... |
| DataSheet: |  IRFSL3307 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRFSL3307 is a MOSFET that is used in a wide range of applications. It is an enhancement-mode Field Effect Transistor (FET) built on a very simple architecture, yet offering high performance and low power consumption. It has a maximum operating temperature range of up to +150°C, low voltage operation of up to 12 V, and low input capacitance. It can be used to control power in high-efficiency switching applications, such as switch mode power supplies (SMPS), or for high-speed power amplification. The IRFSL3307 has an enhanced version of the industry-standard N-Channel MOSFET structure, which allows for a low-cost device with very low on-state resistance, excellent thermal characteristics, and very high blocking voltage capability. This makes it ideal for use in various power switches and low-energy switching applications. The working principle of the IRFSL3307 N-channel MOSFET is based on its three terminals: the gate, the source, and the drain. The gate is the control terminal that is used to regulate the flow of electrons through the transistor. A positive voltage applied to the gate will cause the MOSFET to turn on, while a negative voltage will cause it to turn off. The source and drain terminals are connected to either end of the transistor’s channel, and the voltage applied across them will cause the electrons to flow. In low-side switching applications, the IRFSL3307 can be used to control the power delivered to a load. When the gate is brought low, the drain will be “on” and a current will be allowed to flow through the load. When the gate is brought high, the drain will be “off” and the current will be blocked. This allows the user to adjust the amount of power delivered to the load as needed. In high-side switching applications, the IRFSL3307 can also be used to control the power delivered to a load. In this case, it is used to turn the load “on” and “off”. When the gate is brought high, the source terminal will be “on” and a current will be allowed to flow through the load. When the gate is brought low, the source terminal will be “off” and the current will be blocked. The IRFSL3307 is a versatile device that offers many advantages, such as high performance and low power consumption. It is ideal for use in a variety of switching applications, and can be used to control the power delivered to a load. It is a reliable, cost-effective solution for many power switching requirements.The specific data is subject to PDF, and the above content is for reference
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