IRFSL3307ZPBF

Vgs(th) (Max) @ Id:	4V @ 150µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4750pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	5.8 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFSL3307ZPBF Application Field and Working Principle

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used to control loads in modern circuit designs. Out of the vast family of MOSFETs, the IRFSL3307ZPBF FET Switching Transistor is one popular device. It is known for its fast switching operation and high drain current. It is also used for other wide range of applications, such as low noise, analog switching and many others. Let\'s learn more about the application field and working principle of the IRFSL3307ZPBF.

Application Field

The IRFSL3307ZPBF is a N-channel MOSFET switch with a high-side power switch. It is suitable for low-voltage electronic devices, such as DC motor drivers and lamp drivers, as well as for switching and power supply circuits. It can be also used in various signal switches.The high-current capacity of the device makes it suitable for switching power amplifiers and power converters. It is also highly suitable for switching consumer electronics, such as for television and radio receivers.Moreover, the device is capable of turning on and off automatically in response to external input. Therefore, it is highly useful for loading and output current limiting, as well as for other applications. For example, in automotive applications, the device is able to limit current, prevent voltage surges and short circuits, as well as protect other sensitive circuits from potential damage.

Working Principle

The IRFSL3307ZPBF works on the principle of Metal-Oxide-Semiconductor Field-Effect Transistor. In the device, the gate is connected to the source of the transistor, while the other two terminals are the drain and the source, respectively.To turn on the device, a positive voltage is applied to the gate. This creates an electric field in the semi-conductor material between the source and the gate, which attracts electrons from the source to the drain. As a result, a channel is produced and current flows through the channel from source to drain.Similarly, to turn off the device, a negative voltage is applied to the gate. This reduces the electric field, which causes electrons to flow from the drain towards the source. As a result, the channel between the source and the drain is blocked, and the current is stopped.Therefore, the MOSFET device works like an electronic switch and can be used to turn on and off current when needed.

Conclusion

The IRFSL3307ZPBF is a fast switching, high-current FET switch. It can be used in a wide range of applications, such as low noise, analog switching, and power switching. Its ability to turn on and off automatically makes it an ideal choice for controlling loads in modern circuits. Its working principle is based on the principles of Metal-Oxide-Semiconductor Field-Effect Transistor.

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