IRFSL4610

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The IRFSL4610 is a n-channel Enhancement Mode Power MOSFET Transistor that operates at a voltage supply of 20-100V and a drain current of 46A

Application fields

The IRFSL4610 is a power MOSFET transistor that is most commonly used in power switching and amplification applications. This type of transistor is often used in low power electronics including motor control, inverters, DC-DC converters, voltage regulator modules and switching power supplies. It is also commonly used in audio amplifiers and signal distributors.

Working Principle

The basic operation of an IRFSL4610 N-Channel MOSFET is that when a voltage is applied between the gate and source terminals, the gate will pull electrons from the source and deplete a region within the transistor. This will cause the gate-source voltage to rise and the drain-source voltage to decrease, resulting in an increasing drain current. When the gate-source voltage reaches a certain threshold and the drain-source voltage drops low enough, the drain-source current will be saturated, meaning that the current is maintained at a constant level regardless of changes to the gate-source voltage. This is the basic principle of an enhancement mode MOSFET.

When the gate-source voltage is decreased and the applied voltage moves below the threshold level, the transistor will be switched off and the drain-source current will be 0. This is known as the cutoff region for the IRFSL4610. This type of transistor can also be used in logic circuits, as it can be used to switch on and off a logic gate.

The IRFSL4610 exhibits low output capacitance, fast switching speed and low gate-source voltage, making it an ideal choice for switching applications.

Features

The IRFSL4610 is a popular choice for power switching applications, thanks to its low on-resistance, high blocking voltage and low gate-source voltage. It has an RDS (ON) of 8.6mΩ and a total gate charge of only 44nC. It also has a low threshold voltage of only 4.5V which makes it ideal for low voltage circuits.

The IRFSL4610 can operate at a temperature range of -55°C to 175°C and has a maximum avalanche energy rating of 1.2mJ, which makes it suitable for applications where high voltages and currents are encountered.

The IRFSL4610 is also designed to provide excellent ESD protection, with an ESD rating of 8000V.

Summary

The IRFSL4610 is a n-channel Enhancement Mode Power MOSFET Transistor, most commonly used in power switching and amplification applications. It exhibits low output capacitance, fast switching speed and low gate-source voltage making it an ideal choice for switching applications. The IRFSL4610 also has a low RDS (ON) of 8.6mΩ and a low threshold voltage of 4.5V, an operating temperature range of -55°C to 175°C and an ESD rating of 8000V, making it highly suitable for high voltage and current applications.

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