IRFSL7762PBF Allicdata Electronics
Allicdata Part #:

IRFSL7762PBF-ND

Manufacturer Part#:

IRFSL7762PBF

Price: $ 1.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 85A TO262
More Detail: N-Channel 75V 85A (Tc) 140W (Tc) Through Hole TO-2...
DataSheet: IRFSL7762PBF datasheetIRFSL7762PBF Datasheet/PDF
Quantity: 90
1 +: $ 1.18440
10 +: $ 1.06722
Stock 90Can Ship Immediately
$ 1.32
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFSL7762PBF is a type of specialized transistor that is often used in integrated circuits and other power switching applications. This transistor is a part of the International Rectifier\'s Insulated Gate Bipolar Transistor (IGBT) family, which offers superior performance and superior efficiency compared to traditional bipolar transistors and MOSFETs. As an IGBT, the IRFSL7762PBF can provide a high level of current switching operations, making it an excellent choice for a variety of applications.The IRFSL7762PBF is a single-channel, N-channel enhancement-mode MOSFET transistor. It is made up of a monolithically integrated power MOSFET that is optimized to provide high levels of current switching performance. This transistor is designed to be used in a variety of applications that include motor drive circuits, inverters, converters, power supplies and control circuits. When used in these applications, the IRFSL7762PBF can provide excellent performance and efficiency, as well as improved safety and reliability.The IRFSL7762PBF is typically used in the area of power electronics, namely the area of application-specific and integrated circuits that require a high level of current switching. It is also commonly used in high-speed switching applications, due to its low gate switching capacity and fast power dissipation. The IRFSL7762PBF is optimized for high switching rates and its high power channel density and low on-resistance make it an ideal choice for numerous power applications.The working principle of the IRFSL7762PBF is relatively straightforward. This transistor uses an insulated gate (IG) to control the current flow through the channel, which is built into the transistor\'s body. The IG provides sensible control of the current while minimizing power dissipation. This makes it ideal for a variety of applications in which sensitive current control is required.The IRFSL7762PBF is capable of operating at a wide range of temperature levels, due to its thermal conductivity rating of 3 K/W. This allows the transistor to operate at an even higher power level, making it perfect for high-power applications such as motor drivers and switching power supplies. The IRFSL7762PBF can support a current of up to 75 amps, making it an ideal choice for high-power switching applications.In conclusion, the IRFSL7762PBF is a type of high-performance power MOSFET transistor that is well-suited for a wide range of power electronics applications. This transistor is capable of providing a high switch current, as well as excellent thermal performance, making it an excellent choice for applications requiring high current switching. The transistor is also optimized for high switching rates and its low on-resistance makes it an ideal choice for numerous power applications. The IRFSL7762PBF is capable of providing high levels of current switching performance, making it a popular choice for integrated circuits and other power switching applications.

The specific data is subject to PDF, and the above content is for reference

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