IRLZ24NSPBF Allicdata Electronics
Allicdata Part #:

IRLZ24NSPBF-ND

Manufacturer Part#:

IRLZ24NSPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 18A D2PAK
More Detail: N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface...
DataSheet: IRLZ24NSPBF datasheetIRLZ24NSPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFZ24NSPBF is a type of MOSFET, which is a type of Field Effect Transistor (FET). It’s a type of single-gate, insulated-gate FET, so it’s often referred to as an IG-FET. The IRFZ24NSPBF is a specific type of n-channel MOSFET, and one of its most notable features is that it’s a “low-threshold” device, meaning it has a particularly low gate-source voltage threshold. This type of FET is especially useful for those applications in which low-linearity switching is required.

MOSFETs are a type of transistor, and transistors have been around since the 1950s. They are still widely used today, though more advanced versions now exist. The MOSFET is a special type of transistor called a “metal oxide semiconductor field-effect transistor”. It consists of a transistor with two gates instead of just one and it operates by using an insulated gate to control the current flow through the transistor.

The IRFZ24NSPBF has a wide range of applications and can be found in a variety of different products ranging from consumer electronics to automotive systems. It’s often used as a power switch, in power amplifiers and in high-frequency switches. It’s also commonly used as an output buffer in general-purpose logic circuitry, as a level translator and as a power transistor in motor control applications.

To understand the specific working principle of the IRFZ24NSPBF, it’s important to first understand the working principle of a MOSFET. A MOSFET operates by using an insulated gate to control the current flow through the transistor. The gate is basically a voltage-controlled switch. In the case of the IRFZ24NSPBF, the gate is controlled by a low-threshold voltage, so it takes a relatively low voltage to turn the switch on or off.

When a positive voltage is applied to the gate, it turns on, allowing current to flow from the source to the drain. When the gate voltage is removed, the switch turns off and the current is no longer allowed to flow. This is the basic working principle of the IRFZ24NSPBF. It can be used to switch voltages between two points, as its gate voltage can be controlled with great precision.

The IRFZ24NSPBF is a versatile device with numerous applications. Its low-threshold voltage and ease of use make it an ideal choice for many applications, ranging from consumer electronics to automotive systems. It can be used as a power switch, in power amplifiers, in high-frequency switches and as an output buffer. Its versatility and ease of use make it an invaluable tool for engineers and designers.

The specific data is subject to PDF, and the above content is for reference

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