IRLZ34NL Allicdata Electronics
Allicdata Part #:

IRLZ34NL-ND

Manufacturer Part#:

IRLZ34NL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 30A TO-262
More Detail: N-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Through...
DataSheet: IRLZ34NL datasheetIRLZ34NL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLZ34NL is a dynamic low-powered, low-voltage, N-channel, metal oxide insulated gate field effect transistor (MOSFET). It is an ideal device in applications that require switching of low voltages and currents, such as battery powered equipment, portable electronics and other consumer applications. The IRLZ34NL is also known as a single junction vertical FET due to its unique form factor.

The IRLZ34NL functions as a switch or amplifier by using the basic principles of field effect semiconductor technology. The gate of the IRLZ34NL is the control voltage that determines the conductivity and resistance of the electrical circuit. The control voltage is applied to the gate of the transistor, which in turn changes the resistance of the electrical connection, either allowing or preventing the current flow from the source to the drain.

The IRLZ34NL has an extremely low on-resistance (RDS(on)) of typically 4 milliohms. This is lower than the on-resistance of other FETs, which typically range from 10 to 25 milliohms. The low on-resistance of the IRLZ34NL makes it an ideal choice for applications that require high levels of current and a low voltage drop across the transistor. The IRLZ34NL can handle up to 6A of continuous current and has a drain-source breakdown voltage of 40V.

The IRLZ34NL is also a low-noise device, dissipating only 0.2A of reverse-channel leakage current across a range of drain-source voltages up to 1.5V. It also has an excellent gate-source capacitance of 5pF which helps to reduce unwanted power consumption and ensure clean signal transmission. This low gate-source capacitance also helps to reduce turn-on and turn-off times, allowing for higher switching frequencies, up to 2MHz.

The IRLZ34NL is available in a variety of package sizes and configurations, allowing it to be used in a variety of applications ranging from high-voltage, high-performance systems, to low-voltage, low-power applications. In addition, the IRLZ34NL can be used as a linear voltage regulator, a power switch, or a logic gate, making it a versatile and cost-effective choice for a variety of applications.

In conclusion, the IRLZ34NL is an excellent choice for low power, low voltage switching and amplifier applications. The low on-resistance, low-noise characteristics, and low gate-source capacitance makes it an ideal choice for a variety of applications. The IRLZ34NL provides clean signal switching and low power consumption, making it a versatile and cost-effective choice for your switching and amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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