IRLZ24PBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 10A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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.IRLZ24PBF Application Field and Working Principle

The IRLZ24PBF is a single N-channel stasis-enhancement-mode Field Effect Transistor (FET) intended for high-frequency, low-voltage applications. It is capable of providing high performance in a wide range of applications, including audio and video systems, power-supply management, motor control, and general electronic switching. This article will explain the application field and working principle of the IRLZ24PBF.

Application Field

Due to its fast switching speed, low drain-to-source voltage and low on-resistance, the IRLZ24PBF is suitable for high-frequency applications such as aim conditioning, high-frequency communication systems, and motion control. It is also suitable for low voltage DC-DC converters and high-side switches, both of which are important for efficient power management. Furthermore, the IRLZ24PBF can be used for general switching applications, such as audio-video systems and home appliances.

Working Principle

The IRLZ24PBF is a single N-channel FET operating in a stasis-enhancement-mode. When a positive input voltage is applied, the transistor turns on and passes current from the drain to the source. The on-resistance of the IRLZ24PBF is very low and it can withstand a high voltage, making it ideal for applications with high current or voltage. The FET also has a very fast response time, enabling it to switch quickly and efficiently.

In order for the IRLZ24PBF to switch on, the source voltage must be higher than the gate voltage. When the source voltage is equal to the gate voltage, the transistor will turn on and the amount of current passing through the drain-source terminals will be proportional to the gate voltage. The total current passing through the drain-source terminals can be increased by increasing the gate voltage, which will turn on the transistor further. The IRLZ24PBF also has an adjustable Vgs and Vds, which enables it to be tuned to the specific requirements of the application.

Conclusion

The IRLZ24PBF is a single N-channel FET with a wide range of applications due to its fast switching speed, low drain-to-source voltage and low on-resistance. Its adjustable Vgs and Vds, coupled with its fast response time, makes it ideal for high frequency, low voltage applications. Furthermore, its wide range of uses, including audio and video systems, power-supply management, motor control, and general electronic switching, makes the IRLZ24PBF an excellent choice for many different applications.

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