IRLZ24STRL Allicdata Electronics
Allicdata Part #:

IRLZ24STRL-ND

Manufacturer Part#:

IRLZ24STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 17A D2PAK
More Detail: N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface...
DataSheet: IRLZ24STRL datasheetIRLZ24STRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLZ24STR is a single high-voltage, high-speed and low-side field-effect transistor (FET) that is commonly used in modern technologies. It is a powerful transistor and is often installed in DC/DC converters, power supplies, motor controls, and other power-switching applications. Furthermore, the IRLZ24STR has a variety of features and benefits that make it so attractive for use in power electronics designs, including fast switching frequency, low on-state resistance, small size, and high voltage ratings.

The IRLZ24STR, which is designed to be a single high-voltage, high-speed and low-side field-effect transistor, has a drain-source voltage rating of 30V to 100V and a drain current rating of 20A to 100A. With these features, the IRLZ24STR can easily handle high-power applications, making it an ideal choice for motor controls, DC/DC converters, power supplies, and other power-switching applications.

The FET works by using reverse-biased gate-source insulation and controlling current flow by acting as a field-effect diode between the drain and the source. This type of FET relies on a depletion mode where the channel region of the FET becomes depleted of charge by the reverse-biased gate-source voltage. The channel region becomes more conductive with decreasing gate voltage. As the channel region becomes more conductive, the drain-source channel conducts more current, allowing the FET to operate as a low-power switch.

The IRLZ24STR is able to increase its efficiency through heat dissipation and its ability to reduce Vgs, which makes the power loss negligible. It is also equipped with a reverse-blocking feature, which allows the FET to remain in its cut-off state even when its drain-source voltage is bigger than that of the gate voltage. This ensures the supply voltage is not shorted by the drain current.

The IRLZ24STR is composed of silicon dioxide, a material which allows for greater heat dissipation than other materials used for transistors. This enables the IRLZ24STR to provide more efficient operation. Furthermore, the IRLZ24STR has an ESD rating of around 2kv, making it a suitable choice for use in applications that require robust protection against electrostatic discharges.

Due to its fast switching frequency and low on-state resistance, the IRLZ24STR is commonly used in motor applications. It is also used in audio amplifiers and other automotive and telecommunications applications. The low on-state resistance lets the IRLZ24STR switch between high and low states quickly, reducing losses and allowing for more efficient operation.

In summary, the IRLZ24STR is a single high-voltage, high-speed and low-side FET that is commonly used in DC/DC converters, power supplies, motor controls, and other power-switching applications. It has a variety of features and benefits that make it so attractive for use in power electronics designs, including fast switching frequency, low on-state resistance, small size, andhigh voltage ratings. Furthermore, its fast switching frequency, low on-state resistance, and reverse-blocking feature help to make it an ideal choice for motor applications and other power electronics designs.

The specific data is subject to PDF, and the above content is for reference

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