IRLZ34S

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 88W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 18A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRLZ34S Application Field and Working Principle

The IRLZ34S metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most commonly used devices in modern integrated circuits. It is a simple and efficient three-terminal switch that can be used as a voltage-controlled switch, as a current-operated switch, or even as a charge-controlled switch. The device is configured such that its gate voltage (Vgs) determines its resistance between its two main terminals, the source and drain. It is a highly reliable and cost-effective device suitable for wide variety of applications.

Origin of IRLZ34S

The MOSFET was first invented by Mohamed Atalla and Dawon Kahng in 1959 at Bell Labs. The first practical integrated circuit was marketed by Texas Instruments in 1971. This was based on the process of "MOSIS" implemented by Fredrick Terman of Stanford University. The first commercial MOSFET was the IRLZ34S, which was designed in 1977 by Robert Widlar of National Semiconductor. The device was designed to have lower on-resistances and higher breakdown voltages than their predecessors, which made it much more appealing for power management applications.

IRLZ34S Structure and Characteristics

The IRLZ34S comprises a rectangular n-channel MOSFET in a TO-220P surface mount package. It has an electrically insulated gate, which is connected to the source terminal. The drain and source terminals are connected to the drain and source regions of the semiconductor material, respectively. It has a breakdown voltage of 40V and a maximum drain current of 43A. The maximum drain source voltage is 30V, while the maximum gate source voltage is 15V. In addition, the IRLZ34s has a low on-resistance and fast switching speeds, making it ideal for applications where fast switching is required.

IRLZ34S Application Field

The IRLZ34s is an ideal device for a wide variety of applications in the consumer electronics, automotive and general purpose industries. It can be used as a miniaturized switch, as a voltage amplifier, as a core device in DC/DC converters or as a protection device for digital logic. It can also be used for high-current switching applications in automobiles and consumer electronics. In addition, its features make it the ideal choice for power management applications such as motor controllers, solar inverters and LED lighting solutions.

IRLZ34S Working Principle

The IRLZ34S works on the principle of varying the resistance between its drain and source terminals by applying gate voltage (Vgs). The gate voltage allows the transistor to be switched between a low-resistance (normally-on) and a high-resistance (normally-off) state. By adding or subtracting electrical charges to the gate region of the device, the transistor can be switched between its two states. When the gate voltage is less than the threshold voltage (Vth), the transistor is in its normally-on state and current flows freely between the source and drain. When the gate voltage is greater than the threshold voltage, the transistor is in its normally-off state and current cannot pass between the source and drain.

Conclusion

The IRLZ34S is a versatile semiconductor device capable of providing efficient switching solutions in a wide range of applications. Its low on-resistance, high breakdown voltages and fast switching speeds make it the ideal choice for many electrical engineering applications. Thus, the IRLZ34S is a perfect device for power management and high-current switching applications, in both consumer electronics and automotive industries.

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