IRLZ44NSTRLPBF Allicdata Electronics

IRLZ44NSTRLPBF Discrete Semiconductor Products

Allicdata Part #:

IRLZ44NSTRLPBFTR-ND

Manufacturer Part#:

IRLZ44NSTRLPBF

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 47A D2PAK
More Detail: N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Surfac...
DataSheet: IRLZ44NSTRLPBF datasheetIRLZ44NSTRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.53000
10 +: $ 0.51410
100 +: $ 0.50350
1000 +: $ 0.49290
10000 +: $ 0.47700
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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An IRLZ44NSTRLPBF is a type of Field Effect Transistor (FET) belonging to the single MOSFET family. It is designed for use in applications such as load switching, level shifting, low side switching and voltage regulating. Depending on the device, it can handle current ranging from 15A to 55A and up to a maximum junction temperature of 175°C with a range of on-resistance ratings as low as 0.17Ω. This makes it an ideal device for applications requiring low voltage switching and good efficiency.

Applications:

Due to its wide range of applicability, the IRLZ44NSTRLPBF can be used in several different application areas requiring switching and voltage regulation. This includes military and aerospace controls, electronic motor and lighting controls, automotive components and power supplies. It is also often utilized in high frequency relay applications where a small size, high efficiency and fast switching are important. This type of FET is also often employed in portable electronics, handheld devices and in other compact and space saving applications.

Working Principle:

Its working principle is based on an MOSFET’s ability to experience a change in its drain current when a voltage is applied to the gate. When voltage is applied, the resistance of the FET decreases, allowing the drain current to increase. The drain current depends on the type of FET used, the applied voltage and the amount of gate capacitance on the device. In the case of the IRLZ44NSTRLPBF, the device has a low on-resistance, allowing current to flow when the proper voltage is applied.

In order to change its current flow, the voltage seen at the gate must be manipulated. This can either be done by driving the gate with a voltage or, more commonly, by using a gate driver. Gate drivers allow data signals to be applied to the gate, allowing the device to switch between on and off states. In order for the FET to remain off, the gate voltage must be set to a level underneath the turn-on threshold.

However, the FET should not be left in the off state too long as the gate capacitance can cause the voltage to rise up to the turn-on threshold. To prevent this, it is important to include an active gate driver. Active gate drivers are able to keep the FET in the off state for the desired amount of time.

Conclusion:

With its wide range of ratings and excellent performance, the IRLZ44NSTRLPBF has become a mainstay of switching applications in various industries. Due to its low on-resistance and high frequency rates, this type of MOSFET is highly regarded for its reliability and efficiency. With its ability to handle high currents and high voltage in harsh environment and applications, the IRLZ44NSTRLPBF is an ideal choice for reliable switching and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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