IRLZ34NS Allicdata Electronics
Allicdata Part #:

IRLZ34NS-ND

Manufacturer Part#:

IRLZ34NS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 30A D2PAK
More Detail: N-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface...
DataSheet: IRLZ34NS datasheetIRLZ34NS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRLZ34NS is a type of field effect transistor (FET). It is a single, low-pressure, high-power vertical MOSFET with a fully integrated Schottky diode and built-in gate protection. It is designed to minimize the on-state resistance and improve power efficiency in high voltage applications.

Overview

The IRLZ34NS is designed to help with power dissipation and reduce overall power losses in high voltage power applications. The on-state resistance is rated at 27mΩ (typical) and the maximum continuous drain current is rated at 76A. It is suitable for use in a variety of applications such as power switching, motor control, audio amplifiers, and voltage regulators.

Features

  • Fully integrated Schottky diode
  • Built-in gate protection
  • High performance on-state resistance
  • Low threshold voltage
  • Wide operating temperature range (-55 to +150°C)

Pin Connections

1. G – Gate  2. Drain 3. Source  4. Body 5. S.E – Source  6. Drain

Applications

  • Power switching
  • Motor control
  • Audio amplifiers
  • Voltage regulators
  • DC-DC converters
  • Automotive applications

Working Principle

The IRLZ34NS works on the principle of field-effect transistor (FET). It consists of three terminals, namely source, drain, and gate. The source and drain form an conducting channel between them, while the gate provides the voltage to turn the channel on and off. When a positive voltage is applied to the gate, the channel is effectively connected, allowing current to flow between the source and the drain. When the voltage is removed, the channel is disconnected, effectively blocking any current flow.

The IRLZ34NS is designed to facilitate efficient power dissipation and reduce overall power losses. The on-state resistance is rated at 27mΩ (typical) and the maximum continuous drain current is rated at 76A. It is suitable for use in a variety of applications such as power switching, motor control, audio amplifiers, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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