Allicdata Part #: | IRLZ34NS-ND |
Manufacturer Part#: |
IRLZ34NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 30A D2PAK |
More Detail: | N-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface... |
DataSheet: | IRLZ34NS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRLZ34NS is a type of field effect transistor (FET). It is a single, low-pressure, high-power vertical MOSFET with a fully integrated Schottky diode and built-in gate protection. It is designed to minimize the on-state resistance and improve power efficiency in high voltage applications.
Overview
The IRLZ34NS is designed to help with power dissipation and reduce overall power losses in high voltage power applications. The on-state resistance is rated at 27mΩ (typical) and the maximum continuous drain current is rated at 76A. It is suitable for use in a variety of applications such as power switching, motor control, audio amplifiers, and voltage regulators.
Features
- Fully integrated Schottky diode
- Built-in gate protection
- High performance on-state resistance
- Low threshold voltage
- Wide operating temperature range (-55 to +150°C)
Pin Connections
1. G – Gate 2. Drain 3. Source 4. Body 5. S.E – Source 6. Drain
Applications
- Power switching
- Motor control
- Audio amplifiers
- Voltage regulators
- DC-DC converters
- Automotive applications
Working Principle
The IRLZ34NS works on the principle of field-effect transistor (FET). It consists of three terminals, namely source, drain, and gate. The source and drain form an conducting channel between them, while the gate provides the voltage to turn the channel on and off. When a positive voltage is applied to the gate, the channel is effectively connected, allowing current to flow between the source and the drain. When the voltage is removed, the channel is disconnected, effectively blocking any current flow.
The IRLZ34NS is designed to facilitate efficient power dissipation and reduce overall power losses. The on-state resistance is rated at 27mΩ (typical) and the maximum continuous drain current is rated at 76A. It is suitable for use in a variety of applications such as power switching, motor control, audio amplifiers, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRLZ24LPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 17A TO-26... |
IRLZ24 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 17A TO-22... |
IRLZ34 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 30A TO-22... |
IRLZ14 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 10A TO-22... |
IRLZ14L | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 10A TO-26... |
IRLZ14S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 10A D2PAK... |
IRLZ24NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 18A D2PAK... |
IRLZ34NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A D2PAK... |
IRLZ44 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A TO-22... |
IRLZ44NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 47A D2PAK... |
IRLZ44S | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50A D2PAK... |
IRLZ44STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A D2PAK... |
IRLZ34NSTRR | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A D2PAK... |
IRLZ24NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 18A TO-26... |
IRLZ34NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 30A TO-26... |
IRLZ44NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 47A TO-26... |
IRLZ44NSTRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 47A D2PAK... |
IRLZ14STRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 10A D2PAK... |
IRLZ14STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 10A D2PAK... |
IRLZ24L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 17A TO-26... |
IRLZ24NSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 18A D2PAK... |
IRLZ24NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 18A D2PAK... |
IRLZ24S | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 17A D2PAK... |
IRLZ24STRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 17A D2PAK... |
IRLZ24STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 17A D2PAK... |
IRLZ34L | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 30A TO-26... |
IRLZ34S | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 30A D2PAK... |
IRLZ34STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A D2PAK... |
IRLZ34STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A D2PAK... |
IRLZ44L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A TO-26... |
IRLZ44STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A D2PAK... |
IRLZ44ZS | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 51A D2PAK... |
IRLZ44Z | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 51A TO-22... |
IRLZ44ZL | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 51A TO-26... |
IRLZ44ZLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 51A TO-26... |
IRLZ44ZSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 51A D2PAK... |
IRLZ24NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 18A TO-26... |
IRLZ24NSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 18A D2PAK... |
IRLZ34NSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A D2PAK... |
IRLZ34NLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A TO-26... |
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