IRLZ24S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLZ24S is a single N-channel, high-performance, mid voltage, MOSFET power MOSFET developed by International Rectifier Corporation (IRC). This MOSFET is a three-terminal device with an operating temperature range from the -55°C to +150°C. It has an optimized gate charge and low gate resistance, making it suitable for use in a wide range of high-frequency, high-voltage, and high-current applications.

The IRLZ24S MOSFET has a breakdown voltage of 450V and a drain-source ON-resistance of 24mΩ. This device is typically used in high current load switching and distribution applications, such as DC-DC converters, switched-mode power supplies, server power supplies, and battery chargers. The optimized gate charge and low gate resistance, coupled with the high breakdown voltage, make it an efficient device for these applications.

The structure of the IRLZ24S is a N-channel MOSFET with a vertical structure, allowing the device to be operated in either enhancement or depletion modes. The MOSFET has a drain-source current capacity of 2.7A and a gate-source voltage of 7V, allowing for maximum current and power handling capability.

The IRLZ24S is a third-generation MOSFET power MOSFET and features superior levels of device performance due to its optimized gate charge and low gate resistance. The optimized gate charge and low gate resistance result in improved switching speeds, reduced EMI emission, and better efficiency. It also features excellent thermal stability and the ability to handle high current and voltage events.

The working principle of the IRLZ24S is based on the movement of electrons across the MOSFET’s barrier layer. The MOSFET has a source and a drain terminal and a semiconducting gate region that separates the two. When the gate voltage is raised relative to the source, electrons in the form of a conduction channel (or a depletion region) will flow from the source to the drain. This current flow is controlled by the voltage waveform applied to the gate.

The IRLZ24S can be operated in either enhancement or depletion modes. In enhancement mode, the current flow is controlled by the gate voltage. As the gate voltage is increased relative to the source, the current flow increases. In depletion mode, the current flow is controlled by the gate voltage. As the gate voltage is decreased relative to the source, the current flow decreases.

The IRLZ24S can be used in many applications, including switching power supplies, DC-DC converters, battery chargers, and high power amplifiers. It is ideal for use in high current and voltage events, as the optimized gate charge and low gate resistance allow for superior device performance. The improved switching speeds and reduced EMI emission make it suitable for use in high-frequency and high-voltage applications.

In summary, the IRLZ24S is a single N-channel, high-performance, mid voltage MOSFET power device with a breakdown voltage of 450V and low gate resistance. It is ideal for use in high current and voltage events, as it has superior levels of device performance due to its optimized gate charge and low gate resistance. The IRLZ24S can be operated in either enhancement or depletion modes and is suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference