IRLZ24NSTRR Allicdata Electronics
Allicdata Part #:

IRLZ24NSTRR-ND

Manufacturer Part#:

IRLZ24NSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 18A D2PAK
More Detail: N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface...
DataSheet: IRLZ24NSTRR datasheetIRLZ24NSTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLZ24NSTRR transistor is a high-performance power MOSFET transistor with a wide variety of applications. It is a single, symmetrical structure MOSFET with a minimum on-state resistance of 3.7 mΩ. This transistor is used in a wide range of applications, including DC-DC converters, power supplie and power inverters.

This transistor has a low gate charge of 3.7 nC, which makes it an effective and efficient device for use in high-frequency switching applications. It also has a high transconductance of 300 mS, which enables quick turn-on and turn-off of the device. The IRLZ24NSTRR is also capable of high current carrying capacity, up to a maximum of 80 A, and is suitable for very large load currents.

In addition, the IRLZ24NSTRR has extremely low gate capacitance, which makes it an ideal choice for switching applications with high frequency operation. It has very low switching losses, as well as low drive requirements, which allows designers to create power-efficient switching solutions.

The IRLZ24NSTRR\'s working principle is based on the MOSFET structure, where the current is controlled by the voltage applied to the gate. When the gate voltage is applied, the electron charge is attracted to the gate, leading to an inversion region between the source and drain terminals, allowing current to flow from the source to the drain. By choosing the correct gate voltage, designers can adjust the current flow through the transistor and in turn control the level of current applied to the load.

The IRLZ24NSTRR is ideal for a variety of applications, including motor control, high-performance audio amplifiers, switched-mode and resonant converters, PFC stages and voltage regulators. The IRLZ24NSTRR offers excellent performance, relatively low losses and reliable operation. This makes it a great choice for designers looking for an efficient, low-cost solution.

The specific data is subject to PDF, and the above content is for reference

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