IRLZ34PBF Allicdata Electronics
Allicdata Part #:

IRLZ34PBF-ND

Manufacturer Part#:

IRLZ34PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A TO-220AB
More Detail: N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRLZ34PBF datasheetIRLZ34PBF Datasheet/PDF
Quantity: 4160
Stock 4160Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRLZ34PBF Application Field and Working Principle

The IRLZ34PBF is part of a family of power MOSFET devices known as the International Rectifier IRLZ34PBF. It is available in an ultra-small reasonably wide SO-8 package. This device is specially designed for applications where the value of current is too high for low power MOSFETs. It has a maximum drain-source voltage of 55V, a maximum drain-source current of 34A, and gate-source voltage of +/- 20V. This device is ideal for use in automotive, lighting, motor control and switch-mode power supplies. Furthermore, it is also suitable for audio amplifiers, HDD circuits and power management applications.

The abbreviation FET stands for field effect transistor, and MOSFET stands for metal-oxide semiconductor field effect transistor. It is a type of transistor which allows current to pass through it using a gate voltage. A MOSFET is made up of four terminals called a source, drain, gate, and body connected to a semiconductor substrate. It is known as a voltage controlled device since its on or off state is determined by varying the voltage between the gate and body terminals, which are known as the gate voltage. When the source is at a higher voltage than the body, current flows between the source and drain as determined by the gate voltage. This is known as the n-channel. Conversely, when the drain is at a higher voltage than the body, current flows from the body to the drain as determined by the gate voltage. This is known as the p-channel.

The working principle of the IRLZ34PBF is based on the principle of MOSFET. It is made up of two N-type MOSFETs, which are MOSFET transistors consisting of an N-channel and an N-well surrounded by an insulation layer of insulating material. When a voltage is applied to the gate of the MOSFETs, it induces a current in the attached drain electrode and allows current to flow through it, which is effectively a current amplifier. When no voltage is applied to the gate of the MOSFETs, the gate-source voltage of the device is approximately zero and no current flows through it, which is effectively an open circuit.

The IRLZ34PBF is capable of producing an output of current up to 34A, which is ideal for power applications. It also has an extremely low on-state resistance, making it ideal for low voltage/low drain operation. Furthermore, since it is an n-channel FETA, it can also be used in applications where a motor needs to be controlled. Additionally, it can be used in switch-mode power supplies, which is essential for modern power conversion circuitry.

The IRLZ34PBF is an ideal choice when the electrical current needs to be regulated and power dissipation needs to be kept low. It has a wide application field, making it extremely useful for automotive, lighting, motor control, and switch-mode power supplies. It is also suitable for audio amplifiers, HDD circuits, and power management applications. All in all, the IRLZ34PBF is an extremely useful FET device which can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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