IRLZ24NLPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

IRLZ24NLPBF is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is commonly used in various applications. It is a three-pin device consisting of a source terminal, a drain terminal, and a gate terminal. Since IRLZ24NLPBF is a type of field-effect transistor (FET), its operation is based on the fundamental principle of charge control. It utilizes a voltage or current applied to the gate contact to control the current flow between the drain and source terminals, which makes it very versatile and efficient in many applications.

Description and Working Principle

IRLZ24NLPBF is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single enhancement-mode FET (field effect transistor) usually employed in switching applications. It has three terminals, namely source, drain and gate which may be labeled as S, D, and G respectively. This device works on the principle of charge control which utilizes a voltage or current applied to its gate contact to control the current flow between the drain and source terminals.The internal operation of IRLZ24NLPBF is based on the principle of operation of an enhancement-mode MOSFET. This type of FET is actively switched on by applying voltage to its gate terminal. This voltage modulates the conductivity of the MOSFET, based on which the current flow between its drain and source terminals is restricted or amplified. A MOSFET can be viewed as two p-n junctions connected back-to-back (known as the body diode), and an insulating layer in between. When a positive gate voltage is applied, it creates an electrical field that penetrates through the insulating layer. This electric field induces electrons in the channel region of the MOSFET, which then attracts positively charged holes and creates a conductive channel between the source and drain terminals, through which current can now flow. This process of applying gate voltage and employing it to control the current flow between the source and drain terminals makes MOSFETs exceptionally efficient and resourceful.

Applications

IRLZ24NLPBF FETs have a variety of applications, ranging from driving loads to signal conditioning. They are also very helpful in integrating analog signals, especially for signal conditioning purposes. Switching applications are the most typical application for IRLZ24NLPBFs. Due to the charge control principle of their operation, MOSFETs are the go-to choice for switching high-powered loads with precision. High-powered loads, such as motors and HVAC systems, are typically controlled using MOSFETs.The low on-resistance of IRLZ24NLPBF FETs makes them ideal for DC-to-DC converter applications. They are often used as power switches for semiconductor devices, such as DC-DC converters, DC motor drives, etc. because of their high power handling capacity and low on-resistance. IRLZ24NPBF FETs can also be used as analog switches and amplifiers. This can be useful in signal conditioning applications, such as in audio and instrumentation amplifiers, AGC circuits, and transimpedance amplifiers.

Conclusion

In conclusion, IRLZ24NPBF FETs are useful and versatile devices that can be employed in various applications. The main feature of these FETs is their charge control principle of operation, which enables them to control the current flow between the source and drain terminals with precision. This makes them an ideal choice for switching, signal conditioning, and power handling applications.

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