IRLZ44ZLPBF Allicdata Electronics
Allicdata Part #:

IRLZ44ZLPBF-ND

Manufacturer Part#:

IRLZ44ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 51A TO-262
More Detail: N-Channel 55V 51A (Tc) 80W (Tc) Through Hole TO-26...
DataSheet: IRLZ44ZLPBF datasheetIRLZ44ZLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLZ44ZLPBF is a N-channel enhancement-mode power MOSFET (metal-oxide-semiconductor field-effect transistor) produced by International Rectifier. It has been designed as a low-frequency power MOSFET with an excellent gate charge x RDS-on figure of merit, low gate and output capacitance, and high current capability. This transistor is suitable for high-volume switch mode power supply applications, motor control, and load switches. It is equipped with an avalanche current rating of 28 A, which makes it capable of handling large amount of power.

The IRLZ44ZLPBF is an example of a vertical double diffused metal-oxide-semiconductor (DMOS) transistor. This type of transistor has two p-doped regions (the source and drain) and one n-doped region (the channel). A dielectric layer called a gate oxide is placed between the channel and the gate electrode, which allows current to flow through the channel when voltage is applied to the gate. The source and drain can be combined to operate as a single node, and the gate is used to control the current flow through the source-drain channel.

The IRLZ44ZLPBF uses an enhancement-mode design, which means that the MOSFET is normally off and can be turned on by applying a logic-level signal to the gate. The MOSFET is usually operated in a linear region, and can be used to control the output current from a switch mode power supply. This MOSFET is designed for low-frequency operation, and hence it does not suffer from high-frequency switching losses and exhibits high efficiency.

In low-frequency operation, the IRLZ44ZLPBF exhibits excellent switching characteristics. The turn-on delay is minimized, and the switch can be operated at high frequency while still maintaining low on-resistance. The low output capacitance means that the transistor can handle high dV/dt voltage transients, while the low input capacitance results in a low drain-induced barrier lowering (DIBL). The device has a low and constant gate charge, meaning that the power supply controllers have a faster response time.

The IRLZ44ZLPBF is a useful device for low-frequency switch mode power supplies and motor control. With its low on-resistance, low gate capacitance, low input capacitance, and high current capability, this transistor is suitable for a variety of applications. Its high avalanche current rating of 28 A makes it ideal for high-power switch mode power supplies, where it can provide excellent regulation with good switching efficiency.

The specific data is subject to PDF, and the above content is for reference

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