IRLZ44PBF Allicdata Electronics
Allicdata Part #:

IRLZ44PBF-ND

Manufacturer Part#:

IRLZ44PBF

Price: $ 1.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A TO-220AB
More Detail: N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-2...
DataSheet: IRLZ44PBF datasheetIRLZ44PBF Datasheet/PDF
Quantity: 1643
1 +: $ 1.81000
10 +: $ 1.75570
100 +: $ 1.71950
1000 +: $ 1.68330
10000 +: $ 1.62900
Stock 1643Can Ship Immediately
$ 1.81
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLZ44PBF is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in applications including switching, Power Management circuits, motor control, lighting, and amplifier circuits. It is made up of two elements, a Source electrode and a Drain electrode. It is a single-phase type of power MOSFET and is among the most commonly used types of MOSFETs. It is manufactured with a score of benefits, such as high resistance to thermal stress, a low working temperature range, fast switching, and a low operating voltage range.

The IRLZ44PBF works using the principle of a Field Effect Transistor (FET). In an FET, the electric field created by the voltage applied to a gate electrode controls the current flowing through the device. This voltage creates a positive and negative charge on opposite sides of a thin layer of material called the gate oxide, which is present between the gate and the draining region. The gate oxide works to block the current from the source to the gate, allowing only a minimal amount of current to flow from gate to drain. This is known as the “MOS” (metal oxide semiconductor) effect and is the basis of FETs. As the voltage applied to the gate increases, the current flowing through the device increases as well. When the gate voltage reaches a certain threshold, the transistor switches on and allows the current to flow freely.

With the IRLZ44PBF, this process occurs very quickly and efficiently. The device is capable of switching the current on and off in a fraction of a microsecond, making it ideal for modern power applications with high switching frequencies. The device’s temperature range is also very low, making it well-suited for use in high-temperature environments where other transistors would fail. Furthermore, it can operate within a wide range of voltages and currents, making it versatile and ideal for many power applications.

The IRLZ44PBF is suitable for a wide range of applications, although it is particularly popular in applications requiring high speed and low power consumption. It can be used in switch-mode power supplies, motor control circuits, amplifier circuits, lighting systems, power management circuits, and other high-speed circuits. Its low thermal resistance and wide range of operating voltages make it an excellent choice for many applications.

In summary, the IRLZ44PBF is a type of single-phase power MOSFET that is very efficient and versatile. It works based on the principle of an FET, wherein the voltage applied to the gate controls the flow of current in the device. It is capable of switching the current on and off in a fraction of a microsecond, making it ideal for many power applications requiring high switching frequencies. Additionally, it has a low thermal resistance and can operate within wide range of voltages and currents, making it an excellent choice for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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