IRLZ34NSTRR Allicdata Electronics
Allicdata Part #:

IRLZ34NSTRR-ND

Manufacturer Part#:

IRLZ34NSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 30A D2PAK
More Detail: N-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface...
DataSheet: IRLZ34NSTRR datasheetIRLZ34NSTRR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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An IRLZ34NSTRR is a N-channel depletion-mode field-effect transistor commonly used in power management systems. It’s a single transistor, which is available in a circle-shaped or square-shaped pack type and will support various wavelength enhancement technologies. It is designed for use in low-current applications, mainly in low-voltage direct current (DC) circuits like regulators and switches.

Field-effect transistors (FETs) are a type of transistor that uses an electric field to control the conductivity of a semiconductor channel. As their name suggests, FETs work by manipulating the electric field in a way that allows or prevents charge carriers from migrating through the device. FETs are the most common type of transistor and are used in a variety of applications, ranging from analog amplifiers to digital logic gates. MOSFETs are one type of FETs and they stand for Metal Oxide Semiconductor FETs.

The IRLZ34NSTRR is a depletion-mode MOSFET, meaning it operates the opposite way to an enhancement-mode MOSFET, in that the channel is off when no voltage is applied. The drain current will increase as more voltage is applied, until it reaches its maximum rating, while the gate-source voltage will always be kept below its maximum rating in order to keep VDS at a safe level. This behavior makes them ideal for use in low current applications.

The primary uses of IRLZ34NSTRRs are in power management applications such as reducing power consumption in battery operated systems, voltage regulator modules, and motor control. In addition, IRLZ34NSTRRs can also be used for audio and video signal amplification, as well as for DC-DC converters and Buck converters.

The working principle of an IRLZ34NSTRR lies in its ability to adjust the current flow through its drain and source terminals. When a voltage is applied to the gate terminal, the resistance between the drain and source terminals goes down and the current flow is increased. When the gate terminal is left unconnected, the drain-source resistance is increased, lowering the current flow. This is known as the depletion mode.

The IRLZ34NSTRR is a versatile and useful device that can be used in a range of applications. Its depletion mode operation allows it to be used in low current applications and its low on-resistance and low gate capacitance means it can provide better performance in applications such as motor control or audio signal amplification. As it is available in both circular and square packages, it can also be used in more compact designs, making it ideal for use in space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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