IRLZ34 Allicdata Electronics
Allicdata Part #:

IRLZ34-ND

Manufacturer Part#:

IRLZ34

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A TO-220AB
More Detail: N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRLZ34 datasheetIRLZ34 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLS34 power MOSFET is a high-voltage and low-impedance MOSFET based on the Insulated Gate Field Effect Transistor (IGFET) technology that provides excellent on-state conductivity. It features a very low gate threshold voltage, as well as a low output capacitance. This makes it ideal for use in power electronics applications, such as adjustable speed drives, switching regulators, DC/DC converters, motor controllers, and motor drives.

TheIRLZ34 is a MOSFET device specifically designed for low-voltage and high-impedance applications. It is a very low impedance N-channel MOSFET, and it is usually used as a switch or an amplifier in various electronic applications. The IRLS34 is a very efficient MOSFET, as it can provide up to 99% efficiency, making it ideal for applications where power savings are critical.

The IRLS34 features a high voltage rating, which helps provide a better power dissipation performance. It also features a low gate threshold voltage, which greatly simplifies driving and control, as well as reduces the size of drivers and controllers. Due to the low impedance, the IRLS34 can provide higher switching speed compared to other MOSFETs and is able to handle high currents. This makes it suitable for use in DC/DC converters, motor controllers, and motor drives.

The working principle of the IRLS34 is based on the principle of the insulated gate field effect transistor (IGFET). An IGFET is a type of field-effect transistor (FET) that is insulated from its gate. This insulation prevents the gate voltage from changing when the drain voltage or current changes. The gate voltage is controlled by the external gate voltage, which is determined by the gate resistor. The gate resistor is a resistor connected between the gate and source of the FET. By adjusting the resistance of the gate resistor, the gate voltage can be adjusted and the FET can be switched on or off.

The IRLS34 provides very low gate threshold voltage and low input capacitance, which are important for providing efficient operation. The low gate threshold voltage can reduce the power required for driving and controlling the FET, and also reduce the size of the drivers and controllers. The low input capacitance, meanwhile, enables the FET to quickly switch from off to on to off, reducing the time it takes the FET to switch and improving its switching speed.

The IRLS34 is designed for use in applications where high voltage, low output capacitance, and low gate threshold voltage are required. It is ideal for use in industrial, automotive, and telecommunications applications. It can be used as a switch or an amplifier in many power electronics applications, including adjustable speed drives, switching regulators, DC/DC converters, motor controllers, and motor drives. It is an efficient MOSFET and is available in both through-hole and surface mount packages.

The specific data is subject to PDF, and the above content is for reference

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