IXFX24N100

Vgs(th) (Max) @ Id:	5.5V @ 8mA
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	560W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	267nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	390 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IXFX24N100 is a power MOSFET device with a field-effect transistor architecture, allowing for three modes of operation: enhancement mode (normal), depletion mode (reverse), and cut-off (no current flow). It is widely used in many applications such as high-power switching, motor control, and power management. This article will discuss the IXFX24N100 application field and its working principle.

IXFX24N100 Application Field

The IXFX24N100 power MOSFET is well-suited for use in high current, high voltage switching applications. Its low on-state resistance (RDS(on)) and high junction temperature rating make it ideal for high temperature environments. It is frequently used in high switching frequency applications due to its fast switching speeds. Its ability to handle large amounts of current and voltage makes it an ideal choice for motor control, power management, and other high power switching applications.

IXFX24N100 Working Principle

The IXFX24N100 is a field-effect transistor (FET) with three key components that are used to control its operation. These components are the gate, drain, and source. The gate is the voltage-controlled element of the FET, while the drain and source are the current-carrying elements. Applying a voltage to the gate creates an electric field that influences the conductivity of the drain-source channel between the two electrodes. This field-effect is what gives the FET its name.The gate can be used to control the current flow between the drain and source in three distinct modes. In the “enhancement mode” the voltage applied to the gate increases the conductivity of the drain-source channel, allowing for current to flow. In “depletion mode”, the voltage applied to the gate decreases the conductivity of the drain-source channel, inhibiting the current flow. In “cut-off mode”, the gate voltage is zero and the current flow is completely blocked.

Conclusion

The IXFX24N100 is a power MOSFET device featuring a field-effect transistor architecture. It is popular for use in many applications such as high-power switching, motor control, and power management due to its low on-state resistance (RDS(on)), high junction temperature rating, and fast switching speeds. The IXFX24N100 is capable of operating in three modes: enhancement mode (normal), depletion mode (reverse), and cut-off (no current flow). These modes are controlled by the voltage applied to its gate.

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