IXFX78N50P3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFX78N50P3 is a high voltage N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) with a low gate charge. It is a type of field effect transistor (FET) that controls the flow of current between the drain and the source by varying the width of the channel which is inversely proportional to the magnitude of electrical charge applied to the gate. As such, the IXFX78N50P3 is capable of operating in a wide variety of voltage and current applications, from single-ended circuits to differential circuits.

As a power MOSFET, the IXFX78N50P3 is especially suitable for applications that require high voltage and current, such as motor control, lighting and switching. In motor control applications, the MOSFET is commonly used to control the direction and speed of the motor by varying the voltage applied to the gate. Similarly, in lighting applications, the MOSFET can be used to control the brightness and on/off state of the light source. In switching applications, the IXFX78N50P3 can be used to control the switching of high-current loads.

The IXFX78N50P3 has a range of features that make it suitable for use in these applications. Firstly, its low gate charge (<2.2nC) makes it ideal for energy-efficient operation, enabling it to conserve energy. Secondly, its high voltage capability allows it to operate effectively in a wide range of voltage and current levels. Thirdly, its wide thermal range (from -40 to 150 ˚C) gives it the ability to operate effectively in both cold and hot environments. Finally, its fast switching speed (88ns) makes it suitable for use in high-speed systems.

In terms of its operating principle, the IXFX78N50P3 works in the same way as any other MOSFET. The gate of the FET acts a gate between the two terminals (drain and source); the gate acts as the gate to the channel inside the transistor and the magnitude and polarity of the electrical charge applied to the gate determines the width of the channel. In other words, larger (positive) gate voltages result in wider channels, allowing more current to flow through the FET, while smaller (negative) gate voltages result in narrower channels, reducing the amount of current that can flow through the FET.

The IXFX78N50P3 is an ideal choice for applications that require high voltage handling capability and a low gate charge. Its wide thermal range and fast switching speed makes it suitable for a range of applications, while its versatile gate control allows it to be used in a wide variety of circuits. Overall, the IXFX78N50P3 is a great choice for those who require a reliable power MOSFET.

The specific data is subject to PDF, and the above content is for reference